ZrB                         2                          Schottky diode contacts on n-GaN

R. Khanna; K. Ramani; V. Cracium; R. Singh; S. J. Pearton; F. Ren; I. I. Kravchenko

doi:10.1016/j.apsusc.2006.04.041

ZrB ₂ Schottky diode contacts on n-GaN

R. Khanna, K. Ramani, V. Cracium, R. Singh, S. J. Pearton, F. Ren, I. I. Kravchenko

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The annealing temperature dependence of rectifying contact characteristics on epilayers of n-GaN using a ZrB ₂ /Ti/Au metallization scheme deposited by sputtering are reported. A maximum barrier height of 0.57 eV was achieved on samples annealed at 200 °C, with the reverse breakdown voltage of the diodes also a maximum after this anneal. The barrier height was essentially independent of annealing temperature up to 700 °C even though Auger electron spectroscopy depth profiling showed the onset of inter-contact metallurgical reactions at 500 °C. The Ti began to outdiffuse to the surface at temperatures of 350 °C, while the ZrB ₂ /GaN interface showed no evidence of reaction even at 800 °C. The reverse current magnitude of diodes fabricated using the ZrB ₂ contacts was larger than predicted by thermionic emission alone.

Original language	English
Pages (from-to)	2315-2319
Number of pages	5
Journal	Applied Surface Science
Volume	253
Issue number	4
DOIs	https://doi.org/10.1016/j.apsusc.2006.04.041
State	Published - Dec 15 2006
Externally published	Yes

Funding

The work at UF is partially supported by AFOSR grant under grant number F49620-03-1-0370, by the Army Research Office under grant no. DAAD19-01-1-0603, NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich) and the National Science Foundation (DMR 0400416, Dr. L. Hess).

Funders	Funder number
National Science Foundation	CTS-0301178, DMR 0400416
Air Force Office of Scientific Research	F49620-03-1-0370
Army Research Office	DAAD19-01-1-0603
University of Florida

Keywords

Contacts
GaN
Schottky

Access to Document

10.1016/j.apsusc.2006.04.041

Cite this

@article{7a19f203e4054775a0ce17f5a0ffc40f,

title = " ZrB 2 Schottky diode contacts on n-GaN ",

abstract = " The annealing temperature dependence of rectifying contact characteristics on epilayers of n-GaN using a ZrB 2 /Ti/Au metallization scheme deposited by sputtering are reported. A maximum barrier height of 0.57 eV was achieved on samples annealed at 200 °C, with the reverse breakdown voltage of the diodes also a maximum after this anneal. The barrier height was essentially independent of annealing temperature up to 700 °C even though Auger electron spectroscopy depth profiling showed the onset of inter-contact metallurgical reactions at 500 °C. The Ti began to outdiffuse to the surface at temperatures of 350 °C, while the ZrB 2 /GaN interface showed no evidence of reaction even at 800 °C. The reverse current magnitude of diodes fabricated using the ZrB 2 contacts was larger than predicted by thermionic emission alone.",

keywords = "Contacts, GaN, Schottky",

author = "R. Khanna and K. Ramani and V. Cracium and R. Singh and Pearton, {S. J.} and F. Ren and Kravchenko, {I. I.}",

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T1 - ZrB 2 Schottky diode contacts on n-GaN

AU - Khanna, R.

AU - Ramani, K.

AU - Cracium, V.

AU - Singh, R.

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I. I.

PY - 2006/12/15

Y1 - 2006/12/15

N2 - The annealing temperature dependence of rectifying contact characteristics on epilayers of n-GaN using a ZrB 2 /Ti/Au metallization scheme deposited by sputtering are reported. A maximum barrier height of 0.57 eV was achieved on samples annealed at 200 °C, with the reverse breakdown voltage of the diodes also a maximum after this anneal. The barrier height was essentially independent of annealing temperature up to 700 °C even though Auger electron spectroscopy depth profiling showed the onset of inter-contact metallurgical reactions at 500 °C. The Ti began to outdiffuse to the surface at temperatures of 350 °C, while the ZrB 2 /GaN interface showed no evidence of reaction even at 800 °C. The reverse current magnitude of diodes fabricated using the ZrB 2 contacts was larger than predicted by thermionic emission alone.

AB - The annealing temperature dependence of rectifying contact characteristics on epilayers of n-GaN using a ZrB 2 /Ti/Au metallization scheme deposited by sputtering are reported. A maximum barrier height of 0.57 eV was achieved on samples annealed at 200 °C, with the reverse breakdown voltage of the diodes also a maximum after this anneal. The barrier height was essentially independent of annealing temperature up to 700 °C even though Auger electron spectroscopy depth profiling showed the onset of inter-contact metallurgical reactions at 500 °C. The Ti began to outdiffuse to the surface at temperatures of 350 °C, while the ZrB 2 /GaN interface showed no evidence of reaction even at 800 °C. The reverse current magnitude of diodes fabricated using the ZrB 2 contacts was larger than predicted by thermionic emission alone.

KW - Contacts

KW - GaN

KW - Schottky

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