ZrB                         2                         -based Ohmic contacts to p-GaN

Lars Voss; S. J. Pearton; F. Ren; I. I. Kravchenko

doi:10.1016/j.apsusc.2006.03.041

ZrB ₂ -based Ohmic contacts to p-GaN

Lars Voss, S. J. Pearton, F. Ren, I. I. Kravchenko

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The annealing temperature dependence of contact resistance and layer stability of ZrB ₂ /Ti/Au and Ni/Au/ZrB ₂ /Ti/Au Ohmic contacts on p-GaN is reported. The as-deposited contacts are rectifying and transition to Ohmic behavior for annealing at ≥750 °C, a significant improvement in thermal stability compared to the conventional Ni/Au Ohmic contact on p-GaN, which is stable only to <600 °C. A minimum specific contact resistance of ∼2 × 10 ^-3 Ω cm ^-2 was obtained for the ZrB ₂ /Ti/Au after annealing at 800 °C while for Ni/Au/ZrB ₂ /Ti/Au the minimum value was 10 ^-4 Ω cm ^-2 at 900 °C. Auger Electron Spectroscopy profiling showed significant Ti, Ni and Zr out diffusion at 750 °C in the Ni/Au/ZrB ₂ /Ti/Au while the Ti and Zr intermix at 900 °C in the ZrB ₂ /Ti/Au. These boride-based contacts show promise for contacts to p-GaN in high temperature applications.

Original language	English
Pages (from-to)	1934-1938
Number of pages	5
Journal	Applied Surface Science
Volume	253
Issue number	4
DOIs	https://doi.org/10.1016/j.apsusc.2006.03.041
State	Published - Dec 15 2006
Externally published	Yes

Funding

The work at UF is partially supported by the Army Research Office under grant no. DAAD19-01-1-0603, NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich) and the National Science Foundation (DMR 0400416, Dr. L. Hess).

Funders	Funder number
National Science Foundation	CTS-0301178, DMR 0400416
Army Research Office	DAAD19-01-1-0603
University of Florida

Keywords

Ohmic contacts
ZnO

Access to Document

10.1016/j.apsusc.2006.03.041

Cite this

@article{b4468a93334b4fe6bb81199a379f364a,

title = " ZrB 2 -based Ohmic contacts to p-GaN ",

abstract = " The annealing temperature dependence of contact resistance and layer stability of ZrB 2 /Ti/Au and Ni/Au/ZrB 2 /Ti/Au Ohmic contacts on p-GaN is reported. The as-deposited contacts are rectifying and transition to Ohmic behavior for annealing at ≥750 °C, a significant improvement in thermal stability compared to the conventional Ni/Au Ohmic contact on p-GaN, which is stable only to <600 °C. A minimum specific contact resistance of ∼2 × 10 -3 Ω cm -2 was obtained for the ZrB 2 /Ti/Au after annealing at 800 °C while for Ni/Au/ZrB 2 /Ti/Au the minimum value was 10 -4 Ω cm -2 at 900 °C. Auger Electron Spectroscopy profiling showed significant Ti, Ni and Zr out diffusion at 750 °C in the Ni/Au/ZrB 2 /Ti/Au while the Ti and Zr intermix at 900 °C in the ZrB 2 /Ti/Au. These boride-based contacts show promise for contacts to p-GaN in high temperature applications.",

keywords = "Ohmic contacts, ZnO",

author = "Lars Voss and Pearton, {S. J.} and F. Ren and Kravchenko, {I. I.}",

year = "2006",

month = dec,

day = "15",

doi = "10.1016/j.apsusc.2006.03.041",

language = "English",

volume = "253",

pages = "1934--1938",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - ZrB 2 -based Ohmic contacts to p-GaN

AU - Voss, Lars

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I. I.

PY - 2006/12/15

Y1 - 2006/12/15

N2 - The annealing temperature dependence of contact resistance and layer stability of ZrB 2 /Ti/Au and Ni/Au/ZrB 2 /Ti/Au Ohmic contacts on p-GaN is reported. The as-deposited contacts are rectifying and transition to Ohmic behavior for annealing at ≥750 °C, a significant improvement in thermal stability compared to the conventional Ni/Au Ohmic contact on p-GaN, which is stable only to <600 °C. A minimum specific contact resistance of ∼2 × 10 -3 Ω cm -2 was obtained for the ZrB 2 /Ti/Au after annealing at 800 °C while for Ni/Au/ZrB 2 /Ti/Au the minimum value was 10 -4 Ω cm -2 at 900 °C. Auger Electron Spectroscopy profiling showed significant Ti, Ni and Zr out diffusion at 750 °C in the Ni/Au/ZrB 2 /Ti/Au while the Ti and Zr intermix at 900 °C in the ZrB 2 /Ti/Au. These boride-based contacts show promise for contacts to p-GaN in high temperature applications.

AB - The annealing temperature dependence of contact resistance and layer stability of ZrB 2 /Ti/Au and Ni/Au/ZrB 2 /Ti/Au Ohmic contacts on p-GaN is reported. The as-deposited contacts are rectifying and transition to Ohmic behavior for annealing at ≥750 °C, a significant improvement in thermal stability compared to the conventional Ni/Au Ohmic contact on p-GaN, which is stable only to <600 °C. A minimum specific contact resistance of ∼2 × 10 -3 Ω cm -2 was obtained for the ZrB 2 /Ti/Au after annealing at 800 °C while for Ni/Au/ZrB 2 /Ti/Au the minimum value was 10 -4 Ω cm -2 at 900 °C. Auger Electron Spectroscopy profiling showed significant Ti, Ni and Zr out diffusion at 750 °C in the Ni/Au/ZrB 2 /Ti/Au while the Ti and Zr intermix at 900 °C in the ZrB 2 /Ti/Au. These boride-based contacts show promise for contacts to p-GaN in high temperature applications.

KW - Ohmic contacts

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=33751234504&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2006.03.041

DO - 10.1016/j.apsusc.2006.03.041

M3 - Article

AN - SCOPUS:33751234504

SN - 0169-4332

VL - 253

SP - 1934

EP - 1938

JO - Applied Surface Science

JF - Applied Surface Science

IS - 4

ER -