Zone specificity in low energy electron stimulated desorption of Cl+ from reconstructed Si(1 1 1)-7 × 7:Cl surfaces

Doogie Oh; Matthew T. Sieger; Thomas M. Orlando

doi:10.1016/j.susc.2006.07.004

Zone specificity in low energy electron stimulated desorption of Cl⁺ from reconstructed Si(1 1 1)-7 × 7:Cl surfaces

Doogie Oh, Matthew T. Sieger, Thomas M. Orlando

National Center for Computational Scienc

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Diffraction in electron stimulated desorption has revealed a propensity for Cl⁺ desorption from rest atom vs. adatom areas and unfaulted vs. faulted zones of Cl-terminated Si(1 1 1)-(7 × 7) surfaces. We associate the 15 eV ± 1 eV threshold with ionization of Si-Cl σ-bonding surface states and formation of screened two-hole states with Si 3s character. Similar specificity is observed from A and B reconstructions. This can be due to reduced screening in unfaulted regions and increased hole localization in Si back-bonds within faulted regions.

Original language	English
Pages (from-to)	L245-L249
Journal	Surface Science
Volume	600
Issue number	19
DOIs	https://doi.org/10.1016/j.susc.2006.07.004
State	Published - Oct 1 2006

Funding

This work was supported by the United Sates Department of Energy, Office of Science, Contract DE-FG02-02ER15337. Doogie Oh acknowledges support from the Georgia Institute of Technology Nanoscience and Technology Program.

Keywords

Chlorine
Electron stimulated desorption
Electron-solid diffraction
Electron-solid interactions
Silicon

Access to Document

10.1016/j.susc.2006.07.004

Cite this

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title = "Zone specificity in low energy electron stimulated desorption of Cl+ from reconstructed Si(1 1 1)-7 × 7:Cl surfaces",

abstract = "Diffraction in electron stimulated desorption has revealed a propensity for Cl+ desorption from rest atom vs. adatom areas and unfaulted vs. faulted zones of Cl-terminated Si(1 1 1)-(7 × 7) surfaces. We associate the 15 eV ± 1 eV threshold with ionization of Si-Cl σ-bonding surface states and formation of screened two-hole states with Si 3s character. Similar specificity is observed from A and B reconstructions. This can be due to reduced screening in unfaulted regions and increased hole localization in Si back-bonds within faulted regions.",

keywords = "Chlorine, Electron stimulated desorption, Electron-solid diffraction, Electron-solid interactions, Silicon",

author = "Doogie Oh and Sieger, \{Matthew T.\} and Orlando, \{Thomas M.\}",

year = "2006",

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T1 - Zone specificity in low energy electron stimulated desorption of Cl+ from reconstructed Si(1 1 1)-7 × 7:Cl surfaces

AU - Oh, Doogie

AU - Sieger, Matthew T.

AU - Orlando, Thomas M.

PY - 2006/10/1

Y1 - 2006/10/1

N2 - Diffraction in electron stimulated desorption has revealed a propensity for Cl+ desorption from rest atom vs. adatom areas and unfaulted vs. faulted zones of Cl-terminated Si(1 1 1)-(7 × 7) surfaces. We associate the 15 eV ± 1 eV threshold with ionization of Si-Cl σ-bonding surface states and formation of screened two-hole states with Si 3s character. Similar specificity is observed from A and B reconstructions. This can be due to reduced screening in unfaulted regions and increased hole localization in Si back-bonds within faulted regions.

AB - Diffraction in electron stimulated desorption has revealed a propensity for Cl+ desorption from rest atom vs. adatom areas and unfaulted vs. faulted zones of Cl-terminated Si(1 1 1)-(7 × 7) surfaces. We associate the 15 eV ± 1 eV threshold with ionization of Si-Cl σ-bonding surface states and formation of screened two-hole states with Si 3s character. Similar specificity is observed from A and B reconstructions. This can be due to reduced screening in unfaulted regions and increased hole localization in Si back-bonds within faulted regions.

KW - Chlorine

KW - Electron stimulated desorption

KW - Electron-solid diffraction

KW - Electron-solid interactions

KW - Silicon

UR - https://www.scopus.com/pages/publications/33749240372

U2 - 10.1016/j.susc.2006.07.004

DO - 10.1016/j.susc.2006.07.004

M3 - Article

AN - SCOPUS:33749240372

SN - 0039-6028

VL - 600

SP - L245-L249

JO - Surface Science

JF - Surface Science

IS - 19

ER -