TY - JOUR
T1 - X-ray and neutron structure determination and magnetic properties of new quaternary phases RE0.67Ni2Ga5+n-xGex and RE0.67Ni2Ga5+n-xSix (n = 0, 1; RE = Y, Sm, Gd, Tb, Dy, Ho, Er, Tm) synthesized in liquid Ga
AU - Zhuravleva, Marina A.
AU - Chen, X. Z.
AU - Wang, Xiaoping
AU - Schultz, Arthur J.
AU - Ireland, John
AU - Kannewurf, Carl K.
AU - Kanatzidis, Mercouri G.
PY - 2002
Y1 - 2002
N2 - Liquid Ga was used as a solvent to explore the phase formation between rare-earth metals (REs), Ni, and a tetrelide (Tt = Si, Ge). The reactions were performed in excess liquid Ga at 850 °C. Two new phases of general formulas RE0.67Ni2Ga5-xTtx and RE0.67Ni2Ga6-xTtx were found and structurally characterized. The Co analogues of the latter RE0.67Co2Ga6-xGex (RE = Y, Gd) were also prepared. Single-crystal X-ray data: The first group of compounds RE0.67Ni2Ga5-xTtx crystallizes in the hexagonal space group P63/mmc with a structure related to the RE2-xPt4Ga8+y type (Sm0.53Ni2Ga5-xGex, a = 4.1748(7) Å, c = 16.007(4) Å, V = 241.61(8) Å3, Z = 2; Y0.59Ni2Ga5-xGex, a = 4.1344(11) Å, c = 15.887(6) Å, V = 235.18(12) Å3, Z = 2; Tb0.67Ni2Ga5-xSix, a = 4.1415(11) Å, c = 15.843(6) Å, V = 235.33(12) Å3, Z = 2; Ho0.67Ni2Ga5-xGex, a = 4.1491(4) Å, c = 15.877(2) Å, V = 236.71(5) Å3, Z = 2). The second group RE0.67Ni2Ga6-xTtx crystallizes in P6m2 (Gd0.67Ni2Ga6-xGex, a = 4.1856(10) Å, c = 9.167(3) Å, V = 139.08(7) Å3, Z = 1; SM0.67Ni2Ga6-xSix, a = 4.1976(8) Å, c = 9.159(3) Å, V = 139.76(5) Å3, Z = 1) in a structure related to the ErNi3Al9 structure type with disorder in the RE-Ga plane. Dy0.67Ni2Ga6-xGex crystallizes in space group P31c (a = 7.2536(8) Å, c = 18.308(3) Å, V = 834.21(2) Å3, Z = 6) with partial disorder in the RE-Ga plane. The structures of these two groups of compounds are related to each other and contain similar building motifs, namely Gan[NiGa2-x/2Gex/2]2 slabs and RE0.67Ga monatomic layers which alternate along the c-direction, forming a 3D structure. The parameter x and the position of the tetrelide in the structure were determined by single-crystal neutron diffraction. Complete or partial disorder of the RE and Ga atoms is observed in the RE-Ga plane. The origin of the disorder lies in the extensive and random stacking faults of ordered RE-Ga planes, which apparently slide easily in the ab plane and create an averaged disordered picture. Electrical conductivity and thermopower measurements indicate that these compounds are metallic conductors. The magnetic measurements show antiferromagnetic ordering at ∼3-4 K and Curie-Weiss behavior at higher temperatures with the values of μeff close to those of RE3+ free ions. Strong 2-fold crystal field anisotropy is observed for the heavy RE analogues. The anisotropy constants K2para calculated from the Weiss constant anisotropy for heavy RE analogues are reported.
AB - Liquid Ga was used as a solvent to explore the phase formation between rare-earth metals (REs), Ni, and a tetrelide (Tt = Si, Ge). The reactions were performed in excess liquid Ga at 850 °C. Two new phases of general formulas RE0.67Ni2Ga5-xTtx and RE0.67Ni2Ga6-xTtx were found and structurally characterized. The Co analogues of the latter RE0.67Co2Ga6-xGex (RE = Y, Gd) were also prepared. Single-crystal X-ray data: The first group of compounds RE0.67Ni2Ga5-xTtx crystallizes in the hexagonal space group P63/mmc with a structure related to the RE2-xPt4Ga8+y type (Sm0.53Ni2Ga5-xGex, a = 4.1748(7) Å, c = 16.007(4) Å, V = 241.61(8) Å3, Z = 2; Y0.59Ni2Ga5-xGex, a = 4.1344(11) Å, c = 15.887(6) Å, V = 235.18(12) Å3, Z = 2; Tb0.67Ni2Ga5-xSix, a = 4.1415(11) Å, c = 15.843(6) Å, V = 235.33(12) Å3, Z = 2; Ho0.67Ni2Ga5-xGex, a = 4.1491(4) Å, c = 15.877(2) Å, V = 236.71(5) Å3, Z = 2). The second group RE0.67Ni2Ga6-xTtx crystallizes in P6m2 (Gd0.67Ni2Ga6-xGex, a = 4.1856(10) Å, c = 9.167(3) Å, V = 139.08(7) Å3, Z = 1; SM0.67Ni2Ga6-xSix, a = 4.1976(8) Å, c = 9.159(3) Å, V = 139.76(5) Å3, Z = 1) in a structure related to the ErNi3Al9 structure type with disorder in the RE-Ga plane. Dy0.67Ni2Ga6-xGex crystallizes in space group P31c (a = 7.2536(8) Å, c = 18.308(3) Å, V = 834.21(2) Å3, Z = 6) with partial disorder in the RE-Ga plane. The structures of these two groups of compounds are related to each other and contain similar building motifs, namely Gan[NiGa2-x/2Gex/2]2 slabs and RE0.67Ga monatomic layers which alternate along the c-direction, forming a 3D structure. The parameter x and the position of the tetrelide in the structure were determined by single-crystal neutron diffraction. Complete or partial disorder of the RE and Ga atoms is observed in the RE-Ga plane. The origin of the disorder lies in the extensive and random stacking faults of ordered RE-Ga planes, which apparently slide easily in the ab plane and create an averaged disordered picture. Electrical conductivity and thermopower measurements indicate that these compounds are metallic conductors. The magnetic measurements show antiferromagnetic ordering at ∼3-4 K and Curie-Weiss behavior at higher temperatures with the values of μeff close to those of RE3+ free ions. Strong 2-fold crystal field anisotropy is observed for the heavy RE analogues. The anisotropy constants K2para calculated from the Weiss constant anisotropy for heavy RE analogues are reported.
UR - http://www.scopus.com/inward/record.url?scp=0036066590&partnerID=8YFLogxK
U2 - 10.1021/cm020066o
DO - 10.1021/cm020066o
M3 - Article
AN - SCOPUS:0036066590
SN - 0897-4756
VL - 14
SP - 3066
EP - 3081
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 7
ER -