W2B and CrB2 diffusion barriers for Ni/Au contacts to p-GaN

L. F. Voss; L. Stafford; J. S. Wright; S. J. Pearton; F. Ren; I. I. Kravchenko

doi:10.1063/1.2762280

W₂B and CrB₂ diffusion barriers for Ni/Au contacts to p-GaN

L. F. Voss, L. Stafford, J. S. Wright, S. J. Pearton, F. Ren, I. I. Kravchenko

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Abstract

Ohmic contacts to p -type GaN were fabricated using W2 B and Cr B2 as diffusion barriers for a traditional NiAu contact scheme. The annealing temperature dependence (25-1000 °C) of contact resistance and the thermal aging characteristics at 200 °C were examined. A minimum contact resistance of ∼2× 10-4 cm2 was achieved after annealing at 700 °C for 60 s. These contacts also showed excellent stability as a function of aging at 200 °C. Auger electron depth profiles reveal a large degree of intermixing at the GaN interface between Ni and Au.

Original language	English
Article number	042105
Journal	Applied Physics Letters
Volume	91
Issue number	4
DOIs	https://doi.org/10.1063/1.2762280
State	Published - 2007
Externally published	Yes

Funding

The work was partially supported by AFOSR F49620-03-1-0370, ARO DAAD19-01-1-0603, and NSF (DMR 0400416, L. Hess).

Funders	Funder number
National Science Foundation	DMR 0400416
Air Force Office of Scientific Research	F49620-03-1-0370, ARO DAAD19-01-1-0603

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10.1063/1.2762280

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abstract = "Ohmic contacts to p -type GaN were fabricated using W2 B and Cr B2 as diffusion barriers for a traditional NiAu contact scheme. The annealing temperature dependence (25-1000 °C) of contact resistance and the thermal aging characteristics at 200 °C were examined. A minimum contact resistance of ∼2× 10-4 cm2 was achieved after annealing at 700 °C for 60 s. These contacts also showed excellent stability as a function of aging at 200 °C. Auger electron depth profiles reveal a large degree of intermixing at the GaN interface between Ni and Au.",

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T1 - W2B and CrB2 diffusion barriers for Ni/Au contacts to p-GaN

AU - Voss, L. F.

AU - Stafford, L.

AU - Wright, J. S.

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I. I.

PY - 2007

Y1 - 2007

N2 - Ohmic contacts to p -type GaN were fabricated using W2 B and Cr B2 as diffusion barriers for a traditional NiAu contact scheme. The annealing temperature dependence (25-1000 °C) of contact resistance and the thermal aging characteristics at 200 °C were examined. A minimum contact resistance of ∼2× 10-4 cm2 was achieved after annealing at 700 °C for 60 s. These contacts also showed excellent stability as a function of aging at 200 °C. Auger electron depth profiles reveal a large degree of intermixing at the GaN interface between Ni and Au.

AB - Ohmic contacts to p -type GaN were fabricated using W2 B and Cr B2 as diffusion barriers for a traditional NiAu contact scheme. The annealing temperature dependence (25-1000 °C) of contact resistance and the thermal aging characteristics at 200 °C were examined. A minimum contact resistance of ∼2× 10-4 cm2 was achieved after annealing at 700 °C for 60 s. These contacts also showed excellent stability as a function of aging at 200 °C. Auger electron depth profiles reveal a large degree of intermixing at the GaN interface between Ni and Au.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042105

ER -

W₂B and CrB₂ diffusion barriers for Ni/Au contacts to p-GaN

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