WriteSmoothing: Improving lifetime of non-volatile caches using intra-set wear-leveling

Sparsh Mittal, Jeffrey S. Vetter, Dong Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

24 Scopus citations

Abstract

Driven by the trends of increasing core-count and bandwidth-wall problem, the size of last level caches (LLCs) has greatly increased. Since SRAM consumes high leakage power, researchers have explored use of non-volatile memories (NVMs) for designing caches as they provide high density and consume low leakage power. However, since NVMs have low write-endurance and the existing cache management policies are write variation-unaware, effective wear-leveling techniques are required for achieving reasonable cache lifetimes using NVMs. We present WriteSmoothing, a technique for mitigating intra-set write variation in NVM caches. WriteSmoothing logically divides the cache-sets into multiple modules. For each module, WriteSmoothing collectively records number of writes in each way for any of the sets. It then periodically makes most frequently written ways in a module unavailable to shift the write-pressure to other ways in the sets of the module. Extensive simulation results have shown that on average, for single and dual-core system configurations, WriteSmoothing improves cache lifetime by 2.17X and 2.75X, respectively. Also, its implementation overhead is small and it works well for a wide range of algorithm and system parameters.

Original languageEnglish
Title of host publicationGLSVLSI 2014 - Proceedings of the 2014 Great Lakes Symposium on VLSI
PublisherAssociation for Computing Machinery
Pages139-144
Number of pages6
ISBN (Print)9781450328166
DOIs
StatePublished - 2014
Event24th Great Lakes Symposium on VLSI, GLSVLSI 2014 - Houston, TX, United States
Duration: May 21 2014May 23 2014

Publication series

NameProceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI

Conference

Conference24th Great Lakes Symposium on VLSI, GLSVLSI 2014
Country/TerritoryUnited States
CityHouston, TX
Period05/21/1405/23/14

Keywords

  • cache memory
  • device lifetime
  • intra-set write variation
  • non-volatile memory
  • wear-leveling
  • write endurance

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