TY - GEN
T1 - Wide bandgap semiconductors for utility applications
AU - Tolbert, Leon M.
AU - Ozpineci, Burak
AU - Islam, S. Kamrul
AU - Chinthavali, Madhu S.
PY - 2003
Y1 - 2003
N2 - Recent development advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many utility applications of power electronics are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome this limitation, new semiconductor materials for power device applications are needed. Wide band gap semiconductors like silicon carbide (SiC), gallium nitride (GaN) and diamond, with their superior electrical properties are likely candidates to replace Si in the near future for these high power requirements. Among these, SiC is the forerunner as the only wide band gap semiconductor with several commercially available power devices. This paper compares all the abovementioned wide bandgap semiconductors with respect to their applicability and promise for utility applications and predicts the future of power device semiconductor materials.
AB - Recent development advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many utility applications of power electronics are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome this limitation, new semiconductor materials for power device applications are needed. Wide band gap semiconductors like silicon carbide (SiC), gallium nitride (GaN) and diamond, with their superior electrical properties are likely candidates to replace Si in the near future for these high power requirements. Among these, SiC is the forerunner as the only wide band gap semiconductor with several commercially available power devices. This paper compares all the abovementioned wide bandgap semiconductors with respect to their applicability and promise for utility applications and predicts the future of power device semiconductor materials.
KW - Diamond
KW - Gallium Nitride
KW - Power electronics devices
KW - Silicon Carbide
KW - Utility system
KW - Wide band gap semiconductor
UR - http://www.scopus.com/inward/record.url?scp=1542621301&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:1542621301
SN - 0889863350
SN - 9780889863354
T3 - Proceedings of the IASTED Multi-Conference- Power and Energy Systems
SP - 317
EP - 321
BT - Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems
A2 - Smedley, K.M.
T2 - Proceedings of the Seventh IASTED International Multi-Conference - Power and Energy Systems
Y2 - 24 February 2003 through 26 February 2003
ER -