Watching domains grow: In-situ studies of polarization switching by combined scanning probe and scanning transmission electron microscopy

Hyejung Chang, Sergei V. Kalinin, Seungyeul Yang, Pu Yu, Saswata Bhattacharya, Ping P. Wu, Nina Balke, Stephen Jesse, Long Q. Chen, Ramamoorthy Ramesh, Stephen J. Pennycook, Albina Y. Borisevich

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Abstract

Ferroelectric domain nucleation and growth in multiferroic BiFeO 3 films is observed directly by applying a local electric field with a conductive tip inside a scanning transmission electron microscope. The nucleation and growth of a ferroelastic domain and its interaction with pre-existing 71° domain walls are observed and compared with the results of phase-field modeling. In particular, a preferential nucleation site and direction-dependent pinning of domain walls are observed due to slow kinetics of metastable switching in the sample without a bottom electrode. These in situ spatially resolved observations of a first-order bias-induced phase transition reveal the mesoscopic mechanisms underpinning functionality of a wide range of multiferroic materials.

Original languageEnglish
Article number052014
JournalJournal of Applied Physics
Volume110
Issue number5
DOIs
StatePublished - Sep 1 2011

Funding

This research was sponsored by the Materials Sciences and Engineering Division, Office of Basic Energy Sciences of the U.S. Department of Energy, and by appointment (H.J.C.) to the ORNL Postdoctoral Research Program administered jointly by ORNL and ORISE. Instrument access via Oak Ridge National Laboratory’s SHaRE User Facility, which is sponsored by the Scientific User Facilities Division, Office of Basic Energy Sciences, the U.S. Department of Energy, is gratefully acknowledged. The work at Berkeley was also partially supported by the Semiconductor Research Corporation–Nanoelectronics Research Initiative–Western Institute of Nanoelectrics program. The work at Penn State was supported by DOE Basic Sciences under Grant No. DE-FG02-07ER46417.

FundersFunder number
DOE Basic SciencesDE-FG02-07ER46417
Scientific User Facilities Division
U.S. Department of Energy
Semiconductor Research Corporation
Basic Energy Sciences
Oak Ridge National Laboratory
Oak Ridge Institute for Science and Education
Division of Materials Sciences and Engineering

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