Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core-shell nanowire photocathode on silicon substrates

Jiang Wu; Yanbo Li; Jun Kubota; Kazunari Domen; Martin Aagesen; Thomas Ward; Ana Sanchez; Richard Beanland; Yunyan Zhang; Mingchu Tang; Sabina Hatch; Alwyn Seeds; Huiyun Liu

doi:10.1021/nl500170m

Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core-shell nanowire photocathode on silicon substrates

Jiang Wu, Yanbo Li, Jun Kubota, Kazunari Domen, Martin Aagesen, Thomas Ward, Ana Sanchez, Richard Beanland, Yunyan Zhang, Mingchu Tang, Sabina Hatch, Alwyn Seeds, Huiyun Liu

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

We present the wafer-scale fabrication of self-catalyzed p-n homojunction 1.7 eV GaAsP core-shell nanowire photocathodes grown on silicon substrates by molecular beam epitaxy with the incorporation of Pt nanoparticles as hydrogen evolution cocatalysts. Under AM 1.5G illumination, the GaAsP nanowire photocathode yielded a photocurrent density of 4.5 mA/cm² at 0 V versus a reversible hydrogen electrode and a solar-to-hydrogen conversion efficiency of 0.5%, which are much higher than the values previously reported for wafer-scale III-V nanowire photocathodes. In addition, GaAsP has been found to be more resistant to photocorrosion than InGaP. These results open up a new approach to develop efficient tandem photoelectrochemical devices via fabricating GaAsP nanowires on a silicon platform.

Original language	English
Pages (from-to)	2013-2018
Number of pages	6
Journal	Nano Letters
Volume	14
Issue number	4
DOIs	https://doi.org/10.1021/nl500170m
State	Published - Apr 9 2014
Externally published	Yes

Keywords

GaAsP
Nanowire
hydrogen
molecular beam epitaxy
photocathode
self-catalyzed
water splitting

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1021/nl500170m

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title = "Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core-shell nanowire photocathode on silicon substrates",

abstract = "We present the wafer-scale fabrication of self-catalyzed p-n homojunction 1.7 eV GaAsP core-shell nanowire photocathodes grown on silicon substrates by molecular beam epitaxy with the incorporation of Pt nanoparticles as hydrogen evolution cocatalysts. Under AM 1.5G illumination, the GaAsP nanowire photocathode yielded a photocurrent density of 4.5 mA/cm2 at 0 V versus a reversible hydrogen electrode and a solar-to-hydrogen conversion efficiency of 0.5%, which are much higher than the values previously reported for wafer-scale III-V nanowire photocathodes. In addition, GaAsP has been found to be more resistant to photocorrosion than InGaP. These results open up a new approach to develop efficient tandem photoelectrochemical devices via fabricating GaAsP nanowires on a silicon platform.",

keywords = "GaAsP, Nanowire, hydrogen, molecular beam epitaxy, photocathode, self-catalyzed, water splitting",

author = "Jiang Wu and Yanbo Li and Jun Kubota and Kazunari Domen and Martin Aagesen and Thomas Ward and Ana Sanchez and Richard Beanland and Yunyan Zhang and Mingchu Tang and Sabina Hatch and Alwyn Seeds and Huiyun Liu",

year = "2014",

month = apr,

day = "9",

doi = "10.1021/nl500170m",

language = "English",

volume = "14",

pages = "2013--2018",

journal = "Nano Letters",

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T1 - Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core-shell nanowire photocathode on silicon substrates

AU - Wu, Jiang

AU - Li, Yanbo

AU - Kubota, Jun

AU - Domen, Kazunari

AU - Aagesen, Martin

AU - Ward, Thomas

AU - Sanchez, Ana

AU - Beanland, Richard

AU - Zhang, Yunyan

AU - Tang, Mingchu

AU - Hatch, Sabina

AU - Seeds, Alwyn

AU - Liu, Huiyun

PY - 2014/4/9

Y1 - 2014/4/9

N2 - We present the wafer-scale fabrication of self-catalyzed p-n homojunction 1.7 eV GaAsP core-shell nanowire photocathodes grown on silicon substrates by molecular beam epitaxy with the incorporation of Pt nanoparticles as hydrogen evolution cocatalysts. Under AM 1.5G illumination, the GaAsP nanowire photocathode yielded a photocurrent density of 4.5 mA/cm2 at 0 V versus a reversible hydrogen electrode and a solar-to-hydrogen conversion efficiency of 0.5%, which are much higher than the values previously reported for wafer-scale III-V nanowire photocathodes. In addition, GaAsP has been found to be more resistant to photocorrosion than InGaP. These results open up a new approach to develop efficient tandem photoelectrochemical devices via fabricating GaAsP nanowires on a silicon platform.

AB - We present the wafer-scale fabrication of self-catalyzed p-n homojunction 1.7 eV GaAsP core-shell nanowire photocathodes grown on silicon substrates by molecular beam epitaxy with the incorporation of Pt nanoparticles as hydrogen evolution cocatalysts. Under AM 1.5G illumination, the GaAsP nanowire photocathode yielded a photocurrent density of 4.5 mA/cm2 at 0 V versus a reversible hydrogen electrode and a solar-to-hydrogen conversion efficiency of 0.5%, which are much higher than the values previously reported for wafer-scale III-V nanowire photocathodes. In addition, GaAsP has been found to be more resistant to photocorrosion than InGaP. These results open up a new approach to develop efficient tandem photoelectrochemical devices via fabricating GaAsP nanowires on a silicon platform.

KW - GaAsP

KW - Nanowire

KW - hydrogen

KW - molecular beam epitaxy

KW - photocathode

KW - self-catalyzed

KW - water splitting

UR - http://www.scopus.com/inward/record.url?scp=84897995168&partnerID=8YFLogxK

U2 - 10.1021/nl500170m

DO - 10.1021/nl500170m

M3 - Article

AN - SCOPUS:84897995168

SN - 1530-6984

VL - 14

SP - 2013

EP - 2018

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -

Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core-shell nanowire photocathode on silicon substrates

Abstract

Keywords

UN SDGs

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