W 2B-based rectifying contacts to n-GaN

Rohit Khanna; S. J. Pearton; F. Ren; I. Kravchenko; C. J. Kao; G. C. Chi

doi:10.1063/1.2007865

W ₂B-based rectifying contacts to n-GaN

Rohit Khanna, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, G. C. Chi

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Schottky contact formation on n-GaN using a novel W ₂B/Ti/Au metallization scheme was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy measurements. A maximum barrier height of 0.55 eV was achieved on as-deposited samples, with a negative temperature coefficient of 8×10 ^-4 eV/°C over the range 25-150°C. There was also a negative temperature coefficient for the reverse breakdown of the Schottky diodes with W ₂B contacts. The barrier height was essentially independent of annealing temperature up to 500°C and decreased thereafter due to the onset of metallurgical reactions with the GaN. The Ti began to out-diffuse to the surface at temperatures of >500 °C. The reverse current magnitude was larger than predicted by thermionic emission alone.

Original language	English
Article number	052110
Journal	Applied Physics Letters
Volume	87
Issue number	5
DOIs	https://doi.org/10.1063/1.2007865
State	Published - 2005
Externally published	Yes

Funding

The work at UF is partially supported by U.S. AFOSR grant under Grant No. F49620-03-1-0370, by the U.S. Army Research Office under Grant No. DAAD19-01-1-0603, NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich) and the National Science Foundation (DMR0400416, Dr. L. Hess).

Funders	Funder number
U.S. AFOSR	F49620-03-1-0370
National Science Foundation	CTS-0301178, DMR0400416
Army Research Office	DAAD19-01-1-0603
University of Florida

Access to Document

10.1063/1.2007865

Cite this

@article{7ff8192591b14e829519a97fce19c10f,

title = "W 2B-based rectifying contacts to n-GaN",

abstract = "Schottky contact formation on n-GaN using a novel W 2B/Ti/Au metallization scheme was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy measurements. A maximum barrier height of 0.55 eV was achieved on as-deposited samples, with a negative temperature coefficient of 8×10 -4 eV/°C over the range 25-150°C. There was also a negative temperature coefficient for the reverse breakdown of the Schottky diodes with W 2B contacts. The barrier height was essentially independent of annealing temperature up to 500°C and decreased thereafter due to the onset of metallurgical reactions with the GaN. The Ti began to out-diffuse to the surface at temperatures of >500 °C. The reverse current magnitude was larger than predicted by thermionic emission alone.",

author = "Rohit Khanna and Pearton, {S. J.} and F. Ren and I. Kravchenko and Kao, {C. J.} and Chi, {G. C.}",

year = "2005",

doi = "10.1063/1.2007865",

language = "English",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - W 2B-based rectifying contacts to n-GaN

AU - Khanna, Rohit

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I.

AU - Kao, C. J.

AU - Chi, G. C.

PY - 2005

Y1 - 2005

N2 - Schottky contact formation on n-GaN using a novel W 2B/Ti/Au metallization scheme was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy measurements. A maximum barrier height of 0.55 eV was achieved on as-deposited samples, with a negative temperature coefficient of 8×10 -4 eV/°C over the range 25-150°C. There was also a negative temperature coefficient for the reverse breakdown of the Schottky diodes with W 2B contacts. The barrier height was essentially independent of annealing temperature up to 500°C and decreased thereafter due to the onset of metallurgical reactions with the GaN. The Ti began to out-diffuse to the surface at temperatures of >500 °C. The reverse current magnitude was larger than predicted by thermionic emission alone.

AB - Schottky contact formation on n-GaN using a novel W 2B/Ti/Au metallization scheme was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy measurements. A maximum barrier height of 0.55 eV was achieved on as-deposited samples, with a negative temperature coefficient of 8×10 -4 eV/°C over the range 25-150°C. There was also a negative temperature coefficient for the reverse breakdown of the Schottky diodes with W 2B contacts. The barrier height was essentially independent of annealing temperature up to 500°C and decreased thereafter due to the onset of metallurgical reactions with the GaN. The Ti began to out-diffuse to the surface at temperatures of >500 °C. The reverse current magnitude was larger than predicted by thermionic emission alone.

UR - http://www.scopus.com/inward/record.url?scp=33645519793&partnerID=8YFLogxK

U2 - 10.1063/1.2007865

DO - 10.1063/1.2007865

M3 - Article

AN - SCOPUS:33645519793

SN - 0003-6951

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052110

ER -

W ₂B-based rectifying contacts to n-GaN

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this