W                         2                         B-based ohmic contacts to n-GaN

Rohit Khanna; S. J. Pearton; F. Ren; I. Kravchenko; C. J. Kao; G. C. Chi

doi:10.1016/j.apsusc.2005.03.143

W ₂ B-based ohmic contacts to n-GaN

Rohit Khanna, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, G. C. Chi

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Ohmic contact formation on n-GaN using a novel Ti/Al/W ₂ B/Ti/Au metallization scheme was studied using contact resistance, scanning electron microscopy and Auger electron spectroscopy measurements. A minimum specific contact resistivity of 7 × 10 ^-6 Ω cm ² was achieved at an annealing temperature of 800 °C. The contact resistance was essentially independent of measurement temperature, indicating that field emission plays a dominant role in the current transport .The Ti began to outdiffuse to the surface at temperatures of ∼500 °C, while at 800 °C the Al also began to intermix within the contact. By 1000 °C, the contact showed a reacted appearance and AES showed almost complete intermixing of the metallization. The contact resistance showed excellent stability for extended periods at 200 °C, which simulates the type of device operating temperature that might be expected for operation of GaN-based power electronic devices.

Original language	English
Pages (from-to)	1826-1832
Number of pages	7
Journal	Applied Surface Science
Volume	252
Issue number	5
DOIs	https://doi.org/10.1016/j.apsusc.2005.03.143
State	Published - Dec 15 2005
Externally published	Yes

Funding

The work at UF is partially supported by AFOSR (F49620-02-1-0366, G. Witt), ONR (N00014-98-1-02-04, H.B. Dietrich), and NSF DMR 0101438.

Funders	Funder number
National Science Foundation	DMR 0101438
Office of Naval Research	N00014-98-1-02-04
Air Force Office of Scientific Research	F49620-02-1-0366
University of Florida

Keywords

GaN-based power electronic devices
Ohmic contact formation
Ti/Al/W B/Ti/Au metallization scheme

Access to Document

10.1016/j.apsusc.2005.03.143

Cite this

@article{4c5481bdb2f9451ebff9f853b195e1b2,

title = " W 2 B-based ohmic contacts to n-GaN ",

abstract = " Ohmic contact formation on n-GaN using a novel Ti/Al/W 2 B/Ti/Au metallization scheme was studied using contact resistance, scanning electron microscopy and Auger electron spectroscopy measurements. A minimum specific contact resistivity of 7 × 10 -6 Ω cm 2 was achieved at an annealing temperature of 800 °C. The contact resistance was essentially independent of measurement temperature, indicating that field emission plays a dominant role in the current transport .The Ti began to outdiffuse to the surface at temperatures of ∼500 °C, while at 800 °C the Al also began to intermix within the contact. By 1000 °C, the contact showed a reacted appearance and AES showed almost complete intermixing of the metallization. The contact resistance showed excellent stability for extended periods at 200 °C, which simulates the type of device operating temperature that might be expected for operation of GaN-based power electronic devices.",

keywords = "GaN-based power electronic devices, Ohmic contact formation, Ti/Al/W B/Ti/Au metallization scheme",

author = "Rohit Khanna and Pearton, {S. J.} and F. Ren and I. Kravchenko and Kao, {C. J.} and Chi, {G. C.}",

year = "2005",

month = dec,

day = "15",

doi = "10.1016/j.apsusc.2005.03.143",

language = "English",

volume = "252",

pages = "1826--1832",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - W 2 B-based ohmic contacts to n-GaN

AU - Khanna, Rohit

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I.

AU - Kao, C. J.

AU - Chi, G. C.

PY - 2005/12/15

Y1 - 2005/12/15

N2 - Ohmic contact formation on n-GaN using a novel Ti/Al/W 2 B/Ti/Au metallization scheme was studied using contact resistance, scanning electron microscopy and Auger electron spectroscopy measurements. A minimum specific contact resistivity of 7 × 10 -6 Ω cm 2 was achieved at an annealing temperature of 800 °C. The contact resistance was essentially independent of measurement temperature, indicating that field emission plays a dominant role in the current transport .The Ti began to outdiffuse to the surface at temperatures of ∼500 °C, while at 800 °C the Al also began to intermix within the contact. By 1000 °C, the contact showed a reacted appearance and AES showed almost complete intermixing of the metallization. The contact resistance showed excellent stability for extended periods at 200 °C, which simulates the type of device operating temperature that might be expected for operation of GaN-based power electronic devices.

AB - Ohmic contact formation on n-GaN using a novel Ti/Al/W 2 B/Ti/Au metallization scheme was studied using contact resistance, scanning electron microscopy and Auger electron spectroscopy measurements. A minimum specific contact resistivity of 7 × 10 -6 Ω cm 2 was achieved at an annealing temperature of 800 °C. The contact resistance was essentially independent of measurement temperature, indicating that field emission plays a dominant role in the current transport .The Ti began to outdiffuse to the surface at temperatures of ∼500 °C, while at 800 °C the Al also began to intermix within the contact. By 1000 °C, the contact showed a reacted appearance and AES showed almost complete intermixing of the metallization. The contact resistance showed excellent stability for extended periods at 200 °C, which simulates the type of device operating temperature that might be expected for operation of GaN-based power electronic devices.

KW - GaN-based power electronic devices

KW - Ohmic contact formation

KW - Ti/Al/W B/Ti/Au metallization scheme

UR - http://www.scopus.com/inward/record.url?scp=27944493615&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2005.03.143

DO - 10.1016/j.apsusc.2005.03.143

M3 - Article

AN - SCOPUS:27944493615

SN - 0169-4332

VL - 252

SP - 1826

EP - 1832

JO - Applied Surface Science

JF - Applied Surface Science

IS - 5

ER -