Visualization and manipulation of magnetic domains in the quasi-two-dimensional material F e3GeT e2

Giang D. Nguyen, Jinhwan Lee, Tom Berlijn, Qiang Zou, Saban M. Hus, Jewook Park, Zheng Gai, Changgu Lee, An Ping Li

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79 Scopus citations

Abstract

The magnetic domains in two-dimensional layered material Fe3GeTe2 are studied by using a variable-temperature scanning tunneling microscope with a magnetic tip after in situ cleaving of single crystals. A stripy domain structure is revealed in a zero-field-cooled sample below the ferromagnetic transition temperature of 205 K, which is replaced by separate double-walled domains and bubble domains when cooling the sample under a magnetic field of a ferromagnetic Ni tip. The Ni tip can further convert the double-walled domain to a bubble domain pattern as well as move the Neel-type chiral bubble in submicrometer distance. The temperature-dependent evolutions of both zero-field-cooled and field-cooled domain structures correlate well with the bulk magnetization from magnetometry measurements. Atomic resolution scanning tunneling images and spectroscopy are acquired to understand the atomic and electronic structures of the material, which are further corroborated by first-principles calculations.

Original languageEnglish
Article number014425
JournalPhysical Review B
Volume97
Issue number1
DOIs
StatePublished - Jan 22 2018

Funding

This research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. The development of spin-polarized STM was supported by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. DOE. This research used resources of the National Energy Research Scientific Computing Center, a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 and was financially supported by the Institute of Information and Communications Technology Promotion (IITP) (Grant No. B0117-16-1003).

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