Very thin films of high dielectric constant materials

David B. Beach; Catherine E. Vallet; Mariappan Paranthaman

Very thin films of high dielectric constant materials

David B. Beach, Catherine E. Vallet, Mariappan Paranthaman

Nanomaterials Chemistry Group

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

An all-alkoxide route to SrBi₂Ta₂O₉ (SBT) thin films and powders was developed. While stoichiometric gels transformed to single-phase SBT, excess bismuth was required to obtain single-phase SBT films on Pt substrates. An annealing temperature of 800 °C in O₂ for 2 minutes was required to crystallize the films. Electrical measurements of SBT films produced under these conditions showed that films less than 2000 angstroms in thickness were shorted, while films of 3000 to 5000 angstroms had a dielectric constant of approximately 300. RBS measurements of a bismuth titanate film on Pt indicated that Pt diffuses into the dielectric layer when annealed at 700 °C in O₂ for 1 minute, suggesting that interfacial reaction of these layered bismuth materials may be significant.

Original language	English
Pages (from-to)	309-314
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	446
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

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title = "Very thin films of high dielectric constant materials",

abstract = "An all-alkoxide route to SrBi2Ta2O9 (SBT) thin films and powders was developed. While stoichiometric gels transformed to single-phase SBT, excess bismuth was required to obtain single-phase SBT films on Pt substrates. An annealing temperature of 800 °C in O2 for 2 minutes was required to crystallize the films. Electrical measurements of SBT films produced under these conditions showed that films less than 2000 angstroms in thickness were shorted, while films of 3000 to 5000 angstroms had a dielectric constant of approximately 300. RBS measurements of a bismuth titanate film on Pt indicated that Pt diffuses into the dielectric layer when annealed at 700 °C in O2 for 1 minute, suggesting that interfacial reaction of these layered bismuth materials may be significant.",

author = "Beach, {David B.} and Vallet, {Catherine E.} and Mariappan Paranthaman",

year = "1997",

language = "English",

volume = "446",

pages = "309--314",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

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TY - JOUR

T1 - Very thin films of high dielectric constant materials

AU - Beach, David B.

AU - Vallet, Catherine E.

AU - Paranthaman, Mariappan

PY - 1997

Y1 - 1997

N2 - An all-alkoxide route to SrBi2Ta2O9 (SBT) thin films and powders was developed. While stoichiometric gels transformed to single-phase SBT, excess bismuth was required to obtain single-phase SBT films on Pt substrates. An annealing temperature of 800 °C in O2 for 2 minutes was required to crystallize the films. Electrical measurements of SBT films produced under these conditions showed that films less than 2000 angstroms in thickness were shorted, while films of 3000 to 5000 angstroms had a dielectric constant of approximately 300. RBS measurements of a bismuth titanate film on Pt indicated that Pt diffuses into the dielectric layer when annealed at 700 °C in O2 for 1 minute, suggesting that interfacial reaction of these layered bismuth materials may be significant.

AB - An all-alkoxide route to SrBi2Ta2O9 (SBT) thin films and powders was developed. While stoichiometric gels transformed to single-phase SBT, excess bismuth was required to obtain single-phase SBT films on Pt substrates. An annealing temperature of 800 °C in O2 for 2 minutes was required to crystallize the films. Electrical measurements of SBT films produced under these conditions showed that films less than 2000 angstroms in thickness were shorted, while films of 3000 to 5000 angstroms had a dielectric constant of approximately 300. RBS measurements of a bismuth titanate film on Pt indicated that Pt diffuses into the dielectric layer when annealed at 700 °C in O2 for 1 minute, suggesting that interfacial reaction of these layered bismuth materials may be significant.

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M3 - Conference article

AN - SCOPUS:0030702246

SN - 0272-9172

VL - 446

SP - 309

EP - 314

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Very thin films of high dielectric constant materials

Abstract

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