Very heavily electron-doped CrSi ₂ as a high-performance high-temperature thermoelectric material

We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi ₂ and find that at temperatures of 900-1250K and electron dopings of 1-4 × 10 ²¹ cm ^-3, thermopowers as large in magnitude as 200μVK ^-1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping.