Abstract
We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi 2 and find that at temperatures of 900-1250K and electron dopings of 1-4 × 10 21 cm -3, thermopowers as large in magnitude as 200μVK -1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping.
Original language | English |
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Article number | 33045 |
Journal | New Journal of Physics |
Volume | 14 |
DOIs | |
State | Published - Mar 2012 |