Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

Matthew A. Porter, Yunwei Ma, Yuan Qin, Bernadeta Srijanto, Dayrl Briggs, Ivan Kravchenko, Yuhao Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

Original languageEnglish
Title of host publication2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages331-334
Number of pages4
ISBN (Electronic)9798350394825
DOIs
StatePublished - 2024
Event36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Bremen, Germany
Duration: Jun 2 2024Jun 6 2024

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024
Country/TerritoryGermany
CityBremen
Period06/2/2406/6/24

Keywords

  • dynamic breakdown
  • GaN
  • NiO
  • Quasi-vertical
  • Superjunction

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