Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

Matthew A. Porter; Yunwei Ma; Yuan Qin; Bernadeta Srijanto; Dayrl Briggs; Ivan Kravchenko; Yuhao Zhang

doi:10.1109/ISPSD59661.2024.10579650

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

Matthew A. Porter, Yunwei Ma, Yuan Qin, Bernadeta Srijanto, Dayrl Briggs, Ivan Kravchenko, Yuhao Zhang

Nanofabrication Research Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

Original language	English
Title of host publication	2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	331-334
Number of pages	4
ISBN (Electronic)	9798350394825
DOIs	https://doi.org/10.1109/ISPSD59661.2024.10579650
State	Published - 2024
Event	36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Bremen, Germany Duration: Jun 2 2024 → Jun 6 2024

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Conference

Conference	36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024
Country/Territory	Germany
City	Bremen
Period	06/2/24 → 06/6/24

Funding

This work is in part supported by the Office of Naval Research monitored by Lynn Petersen (Grants N00014-21-1-2183 and N00014-24-1-2227) and National Science Foundation (Grant ECCS-2045001). Device fabrication was conducted as part of a user project at the Center for Nanophase Materials Sciences, which is a US Department of Energy User Facility at Oak Ridge National Laboratory.

Keywords

GaN
NiO
Quasi-vertical
Superjunction
dynamic breakdown

Access to Document

10.1109/ISPSD59661.2024.10579650

Cite this

Porter, M. A., Ma, Y., Qin, Y., Srijanto, B., Briggs, D., Kravchenko, I., & Zhang, Y. (2024). Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage. In 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings (pp. 331-334). (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD59661.2024.10579650

Porter, Matthew A. ; Ma, Yunwei ; Qin, Yuan et al. / Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage. 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2024. pp. 331-334 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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title = "Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage",

abstract = "The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.",

keywords = "GaN, NiO, Quasi-vertical, Superjunction, dynamic breakdown",

author = "Porter, {Matthew A.} and Yunwei Ma and Yuan Qin and Bernadeta Srijanto and Dayrl Briggs and Ivan Kravchenko and Yuhao Zhang",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 ; Conference date: 02-06-2024 Through 06-06-2024",

year = "2024",

doi = "10.1109/ISPSD59661.2024.10579650",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

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Porter, MA, Ma, Y, Qin, Y, Srijanto, B , Briggs, D , Kravchenko, I & Zhang, Y 2024, Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage. in 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings. Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Institute of Electrical and Electronics Engineers Inc., pp. 331-334, 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024, Bremen, Germany, 06/2/24. https://doi.org/10.1109/ISPSD59661.2024.10579650

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage. / Porter, Matthew A.; Ma, Yunwei; Qin, Yuan et al.
2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2024. p. 331-334 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Porter, Matthew A.

AU - Ma, Yunwei

AU - Qin, Yuan

AU - Srijanto, Bernadeta

AU - Briggs, Dayrl

AU - Kravchenko, Ivan

AU - Zhang, Yuhao

PY - 2024

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N2 - The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

AB - The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

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Porter MA, Ma Y, Qin Y, Srijanto B , Briggs D , Kravchenko I et al. Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage. In 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2024. p. 331-334. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD59661.2024.10579650

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

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