@inproceedings{b775bd67ada34fcbb8dfa12e5f0a2a1d,
title = "Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage",
abstract = "The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.",
keywords = "dynamic breakdown, GaN, NiO, Quasi-vertical, Superjunction",
author = "Porter, {Matthew A.} and Yunwei Ma and Yuan Qin and Bernadeta Srijanto and Dayrl Briggs and Ivan Kravchenko and Yuhao Zhang",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 ; Conference date: 02-06-2024 Through 06-06-2024",
year = "2024",
doi = "10.1109/ISPSD59661.2024.10579650",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "331--334",
booktitle = "2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings",
}