Abstract
The precisely focused electron beam (e-beam) in scanning transmission electron microscopy has been found to be a versatile tool for patterning matter on the atomic level and enabling atom-by-atom fabrication, however, beam-induced phenomena are known to be extremely sensitive to the e-beam energy and are closely correlated with the proximity of the knock-on threshold. Here we provide a method to control the energy transferred to the sample while facilitating much faster changes in accelerating voltages by maintaining a nearly constant temperature in the electron microscope lenses. We use this method to demonstrate in-situ nano-milling of a graphene film followed rapidly by “gentler” imaging at lower energy. Additionally, the insertion and controlled movement of silicon dopants in graphene is demonstrated by employing a different e-beam energy during each process. We believe the incorporation of variable e-beam energy will broaden the potential for atomic scale e-beam fabrication.
Original language | English |
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Article number | 112949 |
Journal | Ultramicroscopy |
Volume | 211 |
DOIs | |
State | Published - Apr 2020 |
Bibliographical note
Publisher Copyright:© 2020
Keywords
- Rapid acclerating voltage change
- e-beam fabrication
- graphene patterning, atomic manipulation
- scanning transmission electron microscope