Van der Waals Epitaxy Growth of Bi2Se3on a Freestanding Monolayer Graphene Membrane: Implications for Layered Materials and Heterostructures

Jason Lapano; Ondrej Dyck; Andrew R. Lupini; Wonhee Ko; Haoxiang Li; Hu Miao; Ho Nyung Lee; An Ping Li; Matthew Brahlek; Stephen Jesse; Robert G. Moore

doi:10.1021/acsanm.1c01170

Van der Waals Epitaxy Growth of Bi₂Se₃on a Freestanding Monolayer Graphene Membrane: Implications for Layered Materials and Heterostructures

Jason Lapano, Ondrej Dyck, Andrew R. Lupini, Wonhee Ko, Haoxiang Li, Hu Miao, Ho Nyung Lee, An Ping Li, Matthew Brahlek, Stephen Jesse, Robert G. Moore

Research output: Contribution to journal › Article › peer-review

Abstract

Research on two-dimensional and layered materials has expanded over the past 2 decades because of their unique properties and application potential. The key hurdles in realizing this potential are the challenges in controlling their atomic structure and their incompatibility with existing semiconductor nanofabrication techniques. Here we report on high-quality van der Waals epitaxial growth and characterization of a layered topological insulator on freestanding monolayer graphene transferred to different mechanical supports. This "templated"synthesis approach enables direct interrogation of the interfacial atomic structure of the as-grown materials and opens a route toward creating device structures with more traditional semiconductor nanofabrication techniques.

Original language	English
Pages (from-to)	7607-7613
Number of pages	7
Journal	ACS Applied Nano Materials
Volume	4
Issue number	8
DOIs	https://doi.org/10.1021/acsanm.1c01170
State	Published - Aug 27 2021

Funding

The authors acknowledge fruitful discussion with Felix Luepke. The MBE film synthesis and ARPES and STM work were supported by the U.S. Department of Energy (DOE), Office of Science, National Quantum Information Science Research Centers. The STM characterization was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. Electron microscopy and portions of the ARPES efforts were supported by the U.S. DOE, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

Funders	Funder number
ARPES
National Quantum Information Science Research Centers
U.S. Department of Energy
Office of Science
Basic Energy Sciences
Division of Materials Sciences and Engineering

Keywords

angle-resolved photoemission spectroscopy
bismuth selenide
graphene
molecular beam epitaxy
scanning transmission electron microscopy
scanning tunneling microscopy
topological insulator

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/acsanm.1c01170

Cite this

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title = "Van der Waals Epitaxy Growth of Bi2Se3on a Freestanding Monolayer Graphene Membrane: Implications for Layered Materials and Heterostructures",

abstract = "Research on two-dimensional and layered materials has expanded over the past 2 decades because of their unique properties and application potential. The key hurdles in realizing this potential are the challenges in controlling their atomic structure and their incompatibility with existing semiconductor nanofabrication techniques. Here we report on high-quality van der Waals epitaxial growth and characterization of a layered topological insulator on freestanding monolayer graphene transferred to different mechanical supports. This {"}templated{"}synthesis approach enables direct interrogation of the interfacial atomic structure of the as-grown materials and opens a route toward creating device structures with more traditional semiconductor nanofabrication techniques.",

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T2 - Implications for Layered Materials and Heterostructures

AU - Lapano, Jason

AU - Dyck, Ondrej

AU - Lupini, Andrew R.

AU - Ko, Wonhee

AU - Li, Haoxiang

AU - Miao, Hu

AU - Lee, Ho Nyung

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AU - Brahlek, Matthew

AU - Jesse, Stephen

AU - Moore, Robert G.

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AB - Research on two-dimensional and layered materials has expanded over the past 2 decades because of their unique properties and application potential. The key hurdles in realizing this potential are the challenges in controlling their atomic structure and their incompatibility with existing semiconductor nanofabrication techniques. Here we report on high-quality van der Waals epitaxial growth and characterization of a layered topological insulator on freestanding monolayer graphene transferred to different mechanical supports. This "templated"synthesis approach enables direct interrogation of the interfacial atomic structure of the as-grown materials and opens a route toward creating device structures with more traditional semiconductor nanofabrication techniques.

KW - angle-resolved photoemission spectroscopy

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KW - molecular beam epitaxy

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