UV ozone treatment for improving contact resistance on graphene

Chung Wei Chen; Fan Ren; Gou Chung Chi; Sheng Chun Hung; Y. P. Huang; Jihyun Kim; Ivan I. Kravchenko; Stephen J. Pearton

doi:10.1116/1.4754566

UV ozone treatment for improving contact resistance on graphene

Chung Wei Chen
, Fan Ren
, Gou Chung Chi
, Sheng Chun Hung
, Y. P. Huang
, Jihyun Kim
, Ivan I. Kravchenko
, Stephen J. Pearton

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Optimized UV ozone cleaning of graphene layers on SiO₂/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10^-6 Ω-cm ²) compared to untreated surfaces (4 × 10^-3 Ω-cm²). Subsequent annealing at 300 °C lowers the minimum value achieved to 7 × 10^-7 Ω-cm². Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.

Original language	English
Article number	060604
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	30
Issue number	6
DOIs	https://doi.org/10.1116/1.4754566
State	Published - Nov 2012

Funding

This work was supported by the National Science Council of Taiwan under Grant No. NSC 100-2112-M-009-018, NSF contract number ECCS 0901711 monitored by Dr. Yogesh B. Gianchandani and by NSF (J.M. Zavada). A portion of this research was conducted at the Center for Nanophase Materials Sciences, which was sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.

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title = "UV ozone treatment for improving contact resistance on graphene",

abstract = "Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10-6 Ω-cm 2) compared to untreated surfaces (4 × 10-3 Ω-cm2). Subsequent annealing at 300 °C lowers the minimum value achieved to 7 × 10-7 Ω-cm2. Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.",

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AU - Chen, Chung Wei

AU - Ren, Fan

AU - Chi, Gou Chung

AU - Hung, Sheng Chun

AU - Huang, Y. P.

AU - Kim, Jihyun

AU - Kravchenko, Ivan I.

AU - Pearton, Stephen J.

PY - 2012/11

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AB - Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10-6 Ω-cm 2) compared to untreated surfaces (4 × 10-3 Ω-cm2). Subsequent annealing at 300 °C lowers the minimum value achieved to 7 × 10-7 Ω-cm2. Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.

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JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 6

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ER -

UV ozone treatment for improving contact resistance on graphene

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