Abstract
A Bayesian inference method for refining crystallographic structures is presented. The distribution of model parameters is stochastically sampled using Markov chain Monte Carlo. Posterior probability distributions are constructed for all model parameters to properly quantify uncertainty by appropriately modeling the heteroskedasticity and correlation of the error structure. The proposed method is demonstrated by analyzing a National Institute of Standards and Technology silicon standard reference material. The results obtained by Bayesian inference are compared with those determined by Rietveld refinement. Posterior probability distributions of model parameters provide both estimates and uncertainties. The new method better estimates the true uncertainties in the model as compared to the Rietveld method.
Original language | English |
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Article number | 31625 |
Journal | Scientific Reports |
Volume | 6 |
DOIs | |
State | Published - Aug 23 2016 |
Externally published | Yes |
Funding
The authors acknowledge the support of the Kenan Institute for Engineering, Technology and Science at NC State and the Eastman Chemical Company - University Engagement Fund at NC State. JLJ acknowledges support from the National Science Foundation under DMR-1445926. This research used resources of the Advanced Photon Source, a US. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357.
Funders | Funder number |
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Eastman Chemical Company | |
National Science Foundation | DMR-1445926 |
U.S. Department of Energy | |
Directorate for Mathematical and Physical Sciences | 1445926 |
Office of Science | |
Argonne National Laboratory | DE-AC02-06CH11357 |
Kenan Institute for Engineering, Technology and Science |