@inproceedings{78cf56efcb2e4195ae692af33a037382,
title = "Update on SiC-based inverter technology",
abstract = "This paper presents a study of Silicon Carbide (SiC) technology which includes device characterization and modeling, inverter simulation, and test results for several prototype inverters. The static and dynamic characteristics of discrete devices and half bridge modules are presented. Test results of a 55 kW hybrid inverter with SiC Schottky diodes and an 18 kW all-SiC inverter using SiC JFETs and Schottky diodes are demonstrated.",
keywords = "Inverter, Silicon carbide (SiC)",
author = "Madhu Chinthavali and Hui Zhang and Tolbert, {Leon M.} and Burak Ozpineci",
year = "2009",
doi = "10.1109/COBEP.2009.5347590",
language = "English",
isbn = "9781424433704",
series = "2009 Brazilian Power Electronics Conference, COBEP2009",
pages = "71--79",
booktitle = "2009 Brazilian Power Electronics Conference, COBEP2009",
note = "2009 Brazilian Power Electronics Conference, COBEP2009 ; Conference date: 27-09-2009 Through 01-10-2009",
}