Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing

B. Haberl; S. N. Bogle; T. Li; I. McKerracher; S. Ruffell; P. Munroe; J. S. Williams; J. R. Abelson; J. E. Bradby

doi:10.1063/1.3658628

Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing

B. Haberl, S. N. Bogle, T. Li, I. McKerracher, S. Ruffell, P. Munroe, J. S. Williams, J. R. Abelson, J. E. Bradby

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20 Scopus citations

Abstract

We investigate the structure of magnetron-sputtered (MS) amorphous silicon (a-Si) prepared under standard deposition conditions and compare this to pure ion-implanted (II) a-Si. The structure of both films is characterized in their as-prepared and thermally annealed states. Significant differences are observed in short- and medium-range order following thermal annealing. Whereas II a-Si undergoes structural relaxation toward a continuous random network, MS a-Si exhibits little change. Cross-sectional transmission electron microscopy reveals the presence of nanopores in the MS film consistent with reduced mass-density. Therefore, the short- and medium-range order of annealed, MS a-Si is tentatively attributed to these pores.

Original language	English
Article number	096104
Journal	Journal of Applied Physics
Volume	110
Issue number	9
DOIs	https://doi.org/10.1063/1.3658628
State	Published - Nov 1 2011
Externally published	Yes

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title = "Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing",

abstract = "We investigate the structure of magnetron-sputtered (MS) amorphous silicon (a-Si) prepared under standard deposition conditions and compare this to pure ion-implanted (II) a-Si. The structure of both films is characterized in their as-prepared and thermally annealed states. Significant differences are observed in short- and medium-range order following thermal annealing. Whereas II a-Si undergoes structural relaxation toward a continuous random network, MS a-Si exhibits little change. Cross-sectional transmission electron microscopy reveals the presence of nanopores in the MS film consistent with reduced mass-density. Therefore, the short- and medium-range order of annealed, MS a-Si is tentatively attributed to these pores.",

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T1 - Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing

AU - Haberl, B.

AU - Bogle, S. N.

AU - Li, T.

AU - McKerracher, I.

AU - Ruffell, S.

AU - Munroe, P.

AU - Williams, J. S.

AU - Abelson, J. R.

AU - Bradby, J. E.

PY - 2011/11/1

Y1 - 2011/11/1

N2 - We investigate the structure of magnetron-sputtered (MS) amorphous silicon (a-Si) prepared under standard deposition conditions and compare this to pure ion-implanted (II) a-Si. The structure of both films is characterized in their as-prepared and thermally annealed states. Significant differences are observed in short- and medium-range order following thermal annealing. Whereas II a-Si undergoes structural relaxation toward a continuous random network, MS a-Si exhibits little change. Cross-sectional transmission electron microscopy reveals the presence of nanopores in the MS film consistent with reduced mass-density. Therefore, the short- and medium-range order of annealed, MS a-Si is tentatively attributed to these pores.

AB - We investigate the structure of magnetron-sputtered (MS) amorphous silicon (a-Si) prepared under standard deposition conditions and compare this to pure ion-implanted (II) a-Si. The structure of both films is characterized in their as-prepared and thermally annealed states. Significant differences are observed in short- and medium-range order following thermal annealing. Whereas II a-Si undergoes structural relaxation toward a continuous random network, MS a-Si exhibits little change. Cross-sectional transmission electron microscopy reveals the presence of nanopores in the MS film consistent with reduced mass-density. Therefore, the short- and medium-range order of annealed, MS a-Si is tentatively attributed to these pores.

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Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing

Abstract

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