Abstract
In electric double-layer transistors (EDLTs), it is well known that the EDL formed by ionic liquids (ILs) can induce an ultrahigh carrier density at the semiconductor surface, compared to solid dielectric. However, the mechanism of device performance is still not fully understood, especially at a molecular level. Here, we evaluate the gating performance of amorphous indium gallium zinc oxide (a-IGZO) transistor coupled with a series of imidazolium-based ILs, using an approach combining of molecular dynamics simulation and finite element modeling. Results reveal that the EDL with different ion structures could produce inhomogeneous electric fields at the solid-electrolyte interface, and the heterogeneity of electric field-induced charge distributions at semiconductor surface could reduce the electrical conductance of a-IGZO during gating process. Meanwhile, a resistance network analysis was adopted to bridge the nanoscopic data with the macroscopic transfer characteristics of IL-gated transistor, and showed that our theoretical results could well estimate the gating performance of practical devices. Thereby, our findings could provide both new concepts and modeling techniques for IL-gated transistors.
Original language | English |
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Pages (from-to) | 43211-43218 |
Number of pages | 8 |
Journal | ACS Applied Materials and Interfaces |
Volume | 10 |
Issue number | 49 |
DOIs | |
State | Published - Dec 12 2018 |
Funding
This work was financially supported by the National Natural Science Foundation of China (51876072) and Shenzhen Basic Research Project (JCYJ20170307171511292). All simulations were performed at the National Supercomputing Centers in Tianjin (Tianhe-1A) and Guangzhou (Tianhe II). T.Z.W., N.B. and S.V.K. thank the support by the Division of Materials Sciences and Engineering, Basic Energy Sciences, Department of Energy. P.D.R. acknowledges funding for the transistor device fabrication from NSF grant 1544686, which was partially fabricated at the Center for Nanophase Materials Sciences, which is a DOE office of Science user facility. S.D. was supported by the Fluid Interface Reactions, Structures & Transport, an Energy Frontier Research CenterUS Department of Energy, Office of Science, Office of Basic Energy Sciences. This work was financially supported by the National Natural Science Foundation of China (51876072) and Shenzhen Basic Research Project (JCYJ20170307171511292). All simulations were performed at the National Supercomputing Centers in Tianjin (Tianhe-1A) and Guangzhou (Tianhe II). T.Z.W., N.B. and S.V.K. thank the support by the Division of Materials Sciences and Engineering, Basic Energy Sciences Department of Energy. P.D.R. acknowledges funding for the transistor device fabrication from NSF grant 1544686, which was partially fabricated at the Center for Nanophase Materials Sciences, which is a DOE office of Science user facility. S.D. was supported by the Fluid Interface Reactions, Structures & Transport, an Energy Frontier Research Centerâ€"US Department of Energy, Office of Science, Office of Basic Energy Sciences.
Funders | Funder number |
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Center for Nanophase Materials Sciences | |
Energy Frontier Research CenterUS Department of Energy | |
National Science Foundation | 1544686 |
U.S. Department of Energy | |
Office of Science | |
Basic Energy Sciences | |
Division of Materials Sciences and Engineering | |
National Natural Science Foundation of China | 51876072 |
Shenzhen Fundamental Research Program | JCYJ20170307171511292 |
National Supercomputing Center of Tianjin | Tianhe-1A |
Keywords
- amorphous indium gallium zinc oxide
- electric double-layer transistor
- ionic liquid
- liquid gating effect
- surface charge homogeneity