Ultraviolet photovoltaic effect in tilted orientation LaAlO3 single crystals

Xu Wang; Jie Xing; Kun Zhao; Jie Li; Yanhong Huang; Kui juan Jin; Meng He; Huibin Lu; Guozhen Yang

doi:10.1016/j.physb.2006.11.004

Ultraviolet photovoltaic effect in tilted orientation LaAlO₃ single crystals

Xu Wang, Jie Xing, Kun Zhao, Jie Li, Yanhong Huang, Kui juan Jin, Meng He, Huibin Lu, Guozhen Yang

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Pulsed laser-induced photovoltaic effects were observed in the tilted orientation LaAlO₃ (LAO) single crystal wafers without any bias at ambient temperature when the LAO wafers were irradiated by the laser pulses of 246 nm ultraviolet (UV) wavelength. The rise time is 13 ns, and the full-width at half-maximum (FWHM) is 25 ns for the open-circuit photovoltage. The sensitivities of the photovoltage and the photocurrent are 270 mV/mJ and 0.91 mA/mJ for the tilting 20° LAO wafer, respectively. The mechanism of the photo-induced photovoltage in LAO wafers is proposed as the combination of a photoelectric process and a Seebeck one.

Original language	English
Pages (from-to)	104-106
Number of pages	3
Journal	Physica B: Physics of Condensed Matter
Volume	392
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physb.2006.11.004
State	Published - Apr 15 2007
Externally published	Yes

Funding

This work is supported by the National Natural Science Foundation of China, and the National Key Basic Research and Development program of China.

Funders	Funder number
National Key Basic Research and Development program of China
National Natural Science Foundation of China

Keywords

LaAlO single crystal
Photovoltaic effect

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.physb.2006.11.004

Cite this

@article{5ded8b9caaff4b91851d56bc29152d04,

title = "Ultraviolet photovoltaic effect in tilted orientation LaAlO3 single crystals",

abstract = "Pulsed laser-induced photovoltaic effects were observed in the tilted orientation LaAlO3 (LAO) single crystal wafers without any bias at ambient temperature when the LAO wafers were irradiated by the laser pulses of 246 nm ultraviolet (UV) wavelength. The rise time is 13 ns, and the full-width at half-maximum (FWHM) is 25 ns for the open-circuit photovoltage. The sensitivities of the photovoltage and the photocurrent are 270 mV/mJ and 0.91 mA/mJ for the tilting 20° LAO wafer, respectively. The mechanism of the photo-induced photovoltage in LAO wafers is proposed as the combination of a photoelectric process and a Seebeck one.",

keywords = "LaAlO single crystal, Photovoltaic effect",

author = "Xu Wang and Jie Xing and Kun Zhao and Jie Li and Yanhong Huang and Jin, {Kui juan} and Meng He and Huibin Lu and Guozhen Yang",

year = "2007",

month = apr,

day = "15",

doi = "10.1016/j.physb.2006.11.004",

language = "English",

volume = "392",

pages = "104--106",

journal = "Physica B: Physics of Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Ultraviolet photovoltaic effect in tilted orientation LaAlO3 single crystals

AU - Wang, Xu

AU - Xing, Jie

AU - Zhao, Kun

AU - Li, Jie

AU - Huang, Yanhong

AU - Jin, Kui juan

AU - He, Meng

AU - Lu, Huibin

AU - Yang, Guozhen

PY - 2007/4/15

Y1 - 2007/4/15

N2 - Pulsed laser-induced photovoltaic effects were observed in the tilted orientation LaAlO3 (LAO) single crystal wafers without any bias at ambient temperature when the LAO wafers were irradiated by the laser pulses of 246 nm ultraviolet (UV) wavelength. The rise time is 13 ns, and the full-width at half-maximum (FWHM) is 25 ns for the open-circuit photovoltage. The sensitivities of the photovoltage and the photocurrent are 270 mV/mJ and 0.91 mA/mJ for the tilting 20° LAO wafer, respectively. The mechanism of the photo-induced photovoltage in LAO wafers is proposed as the combination of a photoelectric process and a Seebeck one.

AB - Pulsed laser-induced photovoltaic effects were observed in the tilted orientation LaAlO3 (LAO) single crystal wafers without any bias at ambient temperature when the LAO wafers were irradiated by the laser pulses of 246 nm ultraviolet (UV) wavelength. The rise time is 13 ns, and the full-width at half-maximum (FWHM) is 25 ns for the open-circuit photovoltage. The sensitivities of the photovoltage and the photocurrent are 270 mV/mJ and 0.91 mA/mJ for the tilting 20° LAO wafer, respectively. The mechanism of the photo-induced photovoltage in LAO wafers is proposed as the combination of a photoelectric process and a Seebeck one.

KW - LaAlO single crystal

KW - Photovoltaic effect

UR - http://www.scopus.com/inward/record.url?scp=33847263455&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2006.11.004

DO - 10.1016/j.physb.2006.11.004

M3 - Article

AN - SCOPUS:33847263455

SN - 0921-4526

VL - 392

SP - 104

EP - 106

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - 1-2

ER -