Abstract
Pulsed laser-induced photovoltaic effects were observed in the tilted orientation LaAlO3 (LAO) single crystal wafers without any bias at ambient temperature when the LAO wafers were irradiated by the laser pulses of 246 nm ultraviolet (UV) wavelength. The rise time is 13 ns, and the full-width at half-maximum (FWHM) is 25 ns for the open-circuit photovoltage. The sensitivities of the photovoltage and the photocurrent are 270 mV/mJ and 0.91 mA/mJ for the tilting 20° LAO wafer, respectively. The mechanism of the photo-induced photovoltage in LAO wafers is proposed as the combination of a photoelectric process and a Seebeck one.
Original language | English |
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Pages (from-to) | 104-106 |
Number of pages | 3 |
Journal | Physica B: Physics of Condensed Matter |
Volume | 392 |
Issue number | 1-2 |
DOIs | |
State | Published - Apr 15 2007 |
Externally published | Yes |
Funding
This work is supported by the National Natural Science Foundation of China, and the National Key Basic Research and Development program of China.
Funders | Funder number |
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National Key Basic Research and Development program of China | |
National Natural Science Foundation of China |
Keywords
- LaAlO single crystal
- Photovoltaic effect