Abstract
This paper describes a new technique, Sputter-initiated Resonance Ionization Spectroscopy (SIRIS), for ultrasensitive elemental analysis of solid samples. SIRIS combines resonance ionization spectroscopy and ion beam sputtering to provide analyses for all the elements except helium and neon with predicted sensitivities down to 1 part in 10l2 in routine analysis, and greater for special uses. Basic concepts of this technology and new results in the development of the new SIRIS process and apparatus are presented.
Original language | English |
---|---|
Pages (from-to) | 32-39 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 426 |
DOIs | |
State | Published - Oct 19 1983 |
Externally published | Yes |