Abstract
We experimentally demonstrated an epsilon-near-zero (ENZ) mode in an n-doped GaAs layer at 0.8 THz and study its ultrafast dynamics using optical pump terahertz probe spectroscopy. Notable plasmon damping was observed upon optical pumping.
| Original language | English |
|---|---|
| Article number | FTh4B.8 |
| Journal | Optics InfoBase Conference Papers |
| State | Published - 2016 |
| Externally published | Yes |
| Event | CLEO: QELS_Fundamental Science, QELS 2016 - San Jose, United States Duration: Jun 5 2016 → Jun 10 2016 |
Funding
This work was supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, Materials Science and Engineering Division, and was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. DOE, Office of Science. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.