Ultra-high modulation depth exceeding 2,400% in optically controlled topological surface plasmons

Sangwan Sim; Houk Jang; Nikesh Koirala; Matthew Brahlek; Jisoo Moon; Ji Ho Sung; Jun Park; Soonyoung Cha; Seongshik Oh; Moon Ho Jo; Jong Hyun Ahn; Hyunyong Choi

doi:10.1038/ncomms9814

Ultra-high modulation depth exceeding 2,400% in optically controlled topological surface plasmons

Sangwan Sim
, Houk Jang
, Nikesh Koirala
, Matthew Brahlek
, Jisoo Moon
, Ji Ho Sung
, Jun Park
, Soonyoung Cha
, Seongshik Oh
, Moon Ho Jo
, Jong Hyun Ahn
, Hyunyong Choi

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

Modulating light via coherent charge oscillations in solids is the subject of intense research topics in opto-plasmonics. Although a variety of methods are proposed to increase such modulation efficiency, one central challenge is to achieve a high modulation depth (defined by a ratio of extinction with/without light) under small photon-flux injection, which becomes a fundamental trade-off issue both in metals and semiconductors. Here, by fabricating simple micro-ribbon arrays of topological insulator Bi 2 Se 3, we report an unprecedentedly large modulation depth of 2,400% at 1.5THz with very low optical fluence of 45μJcm-'2. This was possible, first because the extinction spectrum is nearly zero due to the Fano-like plasmon-phonon-destructive interference, thereby contributing an extremely small denominator to the extinction ratio. Second, the numerator of the extinction ratio is markedly increased due to the photoinduced formation of massive two-dimensional electron gas below the topological surface states, which is another contributor to the ultra-high modulation depth.

Original language	English
Article number	8814
Journal	Nature Communications
Volume	6
DOIs	https://doi.org/10.1038/ncomms9814
State	Published - Oct 30 2015
Externally published	Yes

Funding

S.S., J.P., S.C. and H.C. were supported by Samsung Research Funding Center of Samsung Electronics under Project Number SRFC-MA1402-02, National Research Foundation of Korea (NRF) through the government of Korea (MSIP) (Grant Nos NRF-2011-0013255, NRF-2009-0083512 and WCI 2011-001), Global Frontier Program (2014M3A6B3063709), the Yonsei University Yonsei-SNU Collaborative Research Fund of 2014, and the Yonsei University Future-leading Research Initiative of 2014. H.J. and J.-H.A. were supported by NRF of Korea through the government of Korea (MSIP) (Grant No. NRF-2009-0083540). N.K., M.B., J.M. and S.O. were supported by ONR (N000141210456), NSF (DMR-1308142) and Gordon and Betty Moore Foundation’s EPiQS Initiative (GBMF4418). J.H.S. and M.-H.J. were supported by Institute for Basic Science, Korea under the contract number of IBS-R014-G1.

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10.1038/ncomms9814

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title = "Ultra-high modulation depth exceeding 2,400\% in optically controlled topological surface plasmons",

abstract = "Modulating light via coherent charge oscillations in solids is the subject of intense research topics in opto-plasmonics. Although a variety of methods are proposed to increase such modulation efficiency, one central challenge is to achieve a high modulation depth (defined by a ratio of extinction with/without light) under small photon-flux injection, which becomes a fundamental trade-off issue both in metals and semiconductors. Here, by fabricating simple micro-ribbon arrays of topological insulator Bi 2 Se 3, we report an unprecedentedly large modulation depth of 2,400\% at 1.5THz with very low optical fluence of 45μJcm-'2. This was possible, first because the extinction spectrum is nearly zero due to the Fano-like plasmon-phonon-destructive interference, thereby contributing an extremely small denominator to the extinction ratio. Second, the numerator of the extinction ratio is markedly increased due to the photoinduced formation of massive two-dimensional electron gas below the topological surface states, which is another contributor to the ultra-high modulation depth.",

author = "Sangwan Sim and Houk Jang and Nikesh Koirala and Matthew Brahlek and Jisoo Moon and Sung, \{Ji Ho\} and Jun Park and Soonyoung Cha and Seongshik Oh and Jo, \{Moon Ho\} and Ahn, \{Jong Hyun\} and Hyunyong Choi",

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T1 - Ultra-high modulation depth exceeding 2,400% in optically controlled topological surface plasmons

AU - Sim, Sangwan

AU - Jang, Houk

AU - Koirala, Nikesh

AU - Brahlek, Matthew

AU - Moon, Jisoo

AU - Sung, Ji Ho

AU - Park, Jun

AU - Cha, Soonyoung

AU - Oh, Seongshik

AU - Jo, Moon Ho

AU - Ahn, Jong Hyun

AU - Choi, Hyunyong

PY - 2015/10/30

Y1 - 2015/10/30

N2 - Modulating light via coherent charge oscillations in solids is the subject of intense research topics in opto-plasmonics. Although a variety of methods are proposed to increase such modulation efficiency, one central challenge is to achieve a high modulation depth (defined by a ratio of extinction with/without light) under small photon-flux injection, which becomes a fundamental trade-off issue both in metals and semiconductors. Here, by fabricating simple micro-ribbon arrays of topological insulator Bi 2 Se 3, we report an unprecedentedly large modulation depth of 2,400% at 1.5THz with very low optical fluence of 45μJcm-'2. This was possible, first because the extinction spectrum is nearly zero due to the Fano-like plasmon-phonon-destructive interference, thereby contributing an extremely small denominator to the extinction ratio. Second, the numerator of the extinction ratio is markedly increased due to the photoinduced formation of massive two-dimensional electron gas below the topological surface states, which is another contributor to the ultra-high modulation depth.

AB - Modulating light via coherent charge oscillations in solids is the subject of intense research topics in opto-plasmonics. Although a variety of methods are proposed to increase such modulation efficiency, one central challenge is to achieve a high modulation depth (defined by a ratio of extinction with/without light) under small photon-flux injection, which becomes a fundamental trade-off issue both in metals and semiconductors. Here, by fabricating simple micro-ribbon arrays of topological insulator Bi 2 Se 3, we report an unprecedentedly large modulation depth of 2,400% at 1.5THz with very low optical fluence of 45μJcm-'2. This was possible, first because the extinction spectrum is nearly zero due to the Fano-like plasmon-phonon-destructive interference, thereby contributing an extremely small denominator to the extinction ratio. Second, the numerator of the extinction ratio is markedly increased due to the photoinduced formation of massive two-dimensional electron gas below the topological surface states, which is another contributor to the ultra-high modulation depth.

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VL - 6

JO - Nature Communications

JF - Nature Communications

M1 - 8814

ER -

Ultra-high modulation depth exceeding 2,400% in optically controlled topological surface plasmons

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