Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method

Yongbo Yuan; Gaurav Giri; Alexander L. Ayzner; Arjan P. Zoombelt; Stefan C.B. Mannsfeld; Jihua Chen; Dennis Nordlund; Michael F. Toney; Jinsong Huang; Zhenan Bao

doi:10.1038/ncomms4005

Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method

Yongbo Yuan, Gaurav Giri, Alexander L. Ayzner, Arjan P. Zoombelt, Stefan C.B. Mannsfeld, Jihua Chen, Dennis Nordlund, Michael F. Toney, Jinsong Huang, Zhenan Bao

Macromolecular Nanomaterials

Research output: Contribution to journal › Article › peer-review

1216 Scopus citations

Abstract

Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43cm² Vs^-1 (25cm² Vs^-1 on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.

Original language	English
Article number	3005
Journal	Nature Communications
Volume	5
DOIs	https://doi.org/10.1038/ncomms4005
State	Published - Jan 8 2014

Funding

This work was financially supported by Defense Advanced Research Projects Agency under the award W31P4Q-08-C-0439 through Agiltron Inc. and the National Science Foundation (DMR-1303178, ECCS-1348272 and CMMI-1265834) and Air Force Office of Scientific Research (FA9550-12-1-0190). The HRTEM was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, US Department of Energy. Portions of this research were carried out at the Stanford Synchrotron Radiation Lightsource, a national user facility operated by Stanford University on behalf of the US Department of Energy, Office of Basic Energy Sciences. We thank Dr Hylke B. Akkerman and Dr Gerwin H. Gelinck in Holst Centre for the verification of the transfer curves.

Funders	Funder number
Agiltron Inc.
National Science Foundation	ECCS-1348272, DMR-1303178, 1303178, CMMI-1265834
Air Force Office of Scientific Research	FA9550-12-1-0190
Defense Advanced Research Projects Agency	W31P4Q-08-C-0439

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10.1038/ncomms4005

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title = "Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method",

abstract = "Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43cm2 Vs-1 (25cm2 Vs-1 on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.",

author = "Yongbo Yuan and Gaurav Giri and Ayzner, {Alexander L.} and Zoombelt, {Arjan P.} and Mannsfeld, {Stefan C.B.} and Jihua Chen and Dennis Nordlund and Toney, {Michael F.} and Jinsong Huang and Zhenan Bao",

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AU - Yuan, Yongbo

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AU - Zoombelt, Arjan P.

AU - Mannsfeld, Stefan C.B.

AU - Chen, Jihua

AU - Nordlund, Dennis

AU - Toney, Michael F.

AU - Huang, Jinsong

AU - Bao, Zhenan

PY - 2014/1/8

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N2 - Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43cm2 Vs-1 (25cm2 Vs-1 on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.

AB - Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43cm2 Vs-1 (25cm2 Vs-1 on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.

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Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method

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