Type inversion in silicon detectors

D. Pitzl; N. Cartiglia; B. Hubbard; D. Hutchinson; J. Leslie; K. O'Shaughnessy; W. Rowe; H. F.W. Sadrozinski; A. Seiden; E. Spencer; H. J. Ziock; P. Ferguson; K. Holzscheiter; W. F. Sommer

doi:10.1016/0168-9002(92)90854-W

Type inversion in silicon detectors

D. Pitzl
, N. Cartiglia
, B. Hubbard
, D. Hutchinson
, J. Leslie
, K. O'Shaughnessy
, W. Rowe
, H. F.W. Sadrozinski
, A. Seiden
, E. Spencer
, H. J. Ziock
, P. Ferguson
, K. Holzscheiter
, W. F. Sommer

Research output: Contribution to journal › Article › peer-review

110 Scopus citations

Abstract

Silicon strip detectors and photodiodes were irradiated in an 800 MeV proton beam. The change of the effective doping concentration was monitored by measuring diode C-V curves. Type inversion is observed at a fluence Φ = 1.5 × 10¹³ cm^-2. Further evidence for type inversion is obtained from a study of pulses generated by an infrared LED in silicon strip detectors. A two-level parametrization is used to describe donor removal and acceptor state creation during proton irradiation: N_{eff = N₀ exp(-cφ)-βφ}. We measure values of c = (5.5 ± 1.1) × 10¹⁴ cm² and β = (0.031 ± 0.006) cm^-1. After type inversion the depletion voltage increases with proton fluence. This may set the limit for the lifetime of silicon detectors at future colliders. However, the occurence of type inversion does not degrade the performance of silicon strip detectors. The effective doping concentration showed a complex post irradiation behaviour. After a short term annealing period the doping concentration increased beyond the value that had been reached immediately after the exposure.

Original language	English
Pages (from-to)	98-104
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	311
Issue number	1-2
DOIs	https://doi.org/10.1016/0168-9002(92)90854-W
State	Published - Jan 1 1992
Externally published	Yes

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Pitzl, D., Cartiglia, N., Hubbard, B., Hutchinson, D., Leslie, J., O'Shaughnessy, K., Rowe, W., Sadrozinski, H. F. W., Seiden, A., Spencer, E., Ziock, H. J., Ferguson, P., Holzscheiter, K., & Sommer, W. F. (1992). Type inversion in silicon detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 311(1-2), 98-104. https://doi.org/10.1016/0168-9002(92)90854-W

@article{ca5e8b96625741fc98ef40767e79f198,

title = "Type inversion in silicon detectors",

abstract = "Silicon strip detectors and photodiodes were irradiated in an 800 MeV proton beam. The change of the effective doping concentration was monitored by measuring diode C-V curves. Type inversion is observed at a fluence Φ = 1.5 × 1013 cm-2. Further evidence for type inversion is obtained from a study of pulses generated by an infrared LED in silicon strip detectors. A two-level parametrization is used to describe donor removal and acceptor state creation during proton irradiation: Neff = N0 exp(-cφ)-βφ. We measure values of c = (5.5 ± 1.1) × 1014 cm2 and β = (0.031 ± 0.006) cm-1. After type inversion the depletion voltage increases with proton fluence. This may set the limit for the lifetime of silicon detectors at future colliders. However, the occurence of type inversion does not degrade the performance of silicon strip detectors. The effective doping concentration showed a complex post irradiation behaviour. After a short term annealing period the doping concentration increased beyond the value that had been reached immediately after the exposure.",

author = "D. Pitzl and N. Cartiglia and B. Hubbard and D. Hutchinson and J. Leslie and K. O'Shaughnessy and W. Rowe and Sadrozinski, \{H. F.W.\} and A. Seiden and E. Spencer and Ziock, \{H. J.\} and P. Ferguson and K. Holzscheiter and Sommer, \{W. F.\}",

year = "1992",

month = jan,

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doi = "10.1016/0168-9002(92)90854-W",

language = "English",

volume = "311",

pages = "98--104",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

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Pitzl, D, Cartiglia, N, Hubbard, B, Hutchinson, D, Leslie, J, O'Shaughnessy, K, Rowe, W, Sadrozinski, HFW, Seiden, A, Spencer, E, Ziock, HJ, Ferguson, P, Holzscheiter, K & Sommer, WF 1992, 'Type inversion in silicon detectors', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 311, no. 1-2, pp. 98-104. https://doi.org/10.1016/0168-9002(92)90854-W

TY - JOUR

T1 - Type inversion in silicon detectors

AU - Pitzl, D.

AU - Cartiglia, N.

AU - Hubbard, B.

AU - Hutchinson, D.

AU - Leslie, J.

AU - O'Shaughnessy, K.

AU - Rowe, W.

AU - Sadrozinski, H. F.W.

AU - Seiden, A.

AU - Spencer, E.

AU - Ziock, H. J.

AU - Ferguson, P.

AU - Holzscheiter, K.

AU - Sommer, W. F.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Silicon strip detectors and photodiodes were irradiated in an 800 MeV proton beam. The change of the effective doping concentration was monitored by measuring diode C-V curves. Type inversion is observed at a fluence Φ = 1.5 × 1013 cm-2. Further evidence for type inversion is obtained from a study of pulses generated by an infrared LED in silicon strip detectors. A two-level parametrization is used to describe donor removal and acceptor state creation during proton irradiation: Neff = N0 exp(-cφ)-βφ. We measure values of c = (5.5 ± 1.1) × 1014 cm2 and β = (0.031 ± 0.006) cm-1. After type inversion the depletion voltage increases with proton fluence. This may set the limit for the lifetime of silicon detectors at future colliders. However, the occurence of type inversion does not degrade the performance of silicon strip detectors. The effective doping concentration showed a complex post irradiation behaviour. After a short term annealing period the doping concentration increased beyond the value that had been reached immediately after the exposure.

AB - Silicon strip detectors and photodiodes were irradiated in an 800 MeV proton beam. The change of the effective doping concentration was monitored by measuring diode C-V curves. Type inversion is observed at a fluence Φ = 1.5 × 1013 cm-2. Further evidence for type inversion is obtained from a study of pulses generated by an infrared LED in silicon strip detectors. A two-level parametrization is used to describe donor removal and acceptor state creation during proton irradiation: Neff = N0 exp(-cφ)-βφ. We measure values of c = (5.5 ± 1.1) × 1014 cm2 and β = (0.031 ± 0.006) cm-1. After type inversion the depletion voltage increases with proton fluence. This may set the limit for the lifetime of silicon detectors at future colliders. However, the occurence of type inversion does not degrade the performance of silicon strip detectors. The effective doping concentration showed a complex post irradiation behaviour. After a short term annealing period the doping concentration increased beyond the value that had been reached immediately after the exposure.

UR - https://www.scopus.com/pages/publications/0002697689

U2 - 10.1016/0168-9002(92)90854-W

DO - 10.1016/0168-9002(92)90854-W

M3 - Article

AN - SCOPUS:0002697689

SN - 0168-9002

VL - 311

SP - 98

EP - 104

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1-2

ER -

Type inversion in silicon detectors

Abstract

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