TY - JOUR
T1 - Type inversion in silicon detectors
AU - Pitzl, D.
AU - Cartiglia, N.
AU - Hubbard, B.
AU - Hutchinson, D.
AU - Leslie, J.
AU - O'Shaughnessy, K.
AU - Rowe, W.
AU - Sadrozinski, H. F.W.
AU - Seiden, A.
AU - Spencer, E.
AU - Ziock, H. J.
AU - Ferguson, P.
AU - Holzscheiter, K.
AU - Sommer, W. F.
PY - 1992/1/1
Y1 - 1992/1/1
N2 - Silicon strip detectors and photodiodes were irradiated in an 800 MeV proton beam. The change of the effective doping concentration was monitored by measuring diode C-V curves. Type inversion is observed at a fluence Φ = 1.5 × 1013 cm-2. Further evidence for type inversion is obtained from a study of pulses generated by an infrared LED in silicon strip detectors. A two-level parametrization is used to describe donor removal and acceptor state creation during proton irradiation: Neff = N0 exp(-cφ)-βφ. We measure values of c = (5.5 ± 1.1) × 1014 cm2 and β = (0.031 ± 0.006) cm-1. After type inversion the depletion voltage increases with proton fluence. This may set the limit for the lifetime of silicon detectors at future colliders. However, the occurence of type inversion does not degrade the performance of silicon strip detectors. The effective doping concentration showed a complex post irradiation behaviour. After a short term annealing period the doping concentration increased beyond the value that had been reached immediately after the exposure.
AB - Silicon strip detectors and photodiodes were irradiated in an 800 MeV proton beam. The change of the effective doping concentration was monitored by measuring diode C-V curves. Type inversion is observed at a fluence Φ = 1.5 × 1013 cm-2. Further evidence for type inversion is obtained from a study of pulses generated by an infrared LED in silicon strip detectors. A two-level parametrization is used to describe donor removal and acceptor state creation during proton irradiation: Neff = N0 exp(-cφ)-βφ. We measure values of c = (5.5 ± 1.1) × 1014 cm2 and β = (0.031 ± 0.006) cm-1. After type inversion the depletion voltage increases with proton fluence. This may set the limit for the lifetime of silicon detectors at future colliders. However, the occurence of type inversion does not degrade the performance of silicon strip detectors. The effective doping concentration showed a complex post irradiation behaviour. After a short term annealing period the doping concentration increased beyond the value that had been reached immediately after the exposure.
UR - http://www.scopus.com/inward/record.url?scp=0002697689&partnerID=8YFLogxK
U2 - 10.1016/0168-9002(92)90854-W
DO - 10.1016/0168-9002(92)90854-W
M3 - Article
AN - SCOPUS:0002697689
SN - 0168-9002
VL - 311
SP - 98
EP - 104
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1-2
ER -