Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition

Min Suk Oh; Sang Ho Kim; Seong Ju Park; Tae Yeon Seong

doi:10.1016/j.spmi.2005.08.068

Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition

Min Suk Oh, Sang Ho Kim, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

We have investigated intentionally undoped p-type ZnO films grown on Si(111) substrates by pulsed-laser deposition as a function of the oxygen pressure. It is shown that the undoped ZnO films experience type conversion from n-type to p-type when the oxygen pressure changes from 7.98×10 ^-3 to 3.99×10^-2 Pa. Ti/Au contacts give ohmic behaviour to n-type ZnO (∼10¹⁷ cm^-3), but leaky Schottky behaviour to p-type ZnO (∼10¹⁸ cm^-3). It is argued based on PL results that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

Original language	English
Pages (from-to)	130-137
Number of pages	8
Journal	Superlattices and Microstructures
Volume	39
Issue number	1-4
DOIs	https://doi.org/10.1016/j.spmi.2005.08.068
State	Published - Jan 2006
Externally published	Yes
Event	E-MRS 2005 Symposium G: ZnO and Related Materials Part 2 - Duration: May 31 2005 → Jun 3 2005

Funding

This work was in part supported by the US Air Force Office of Scientific Research (AFOSR)/Asian Office of Aerospace Research & Development (AOARD).

Funders	Funder number
AOARD
Asian Office of Aerospace Research & Development
Air Force Office of Scientific Research

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10.1016/j.spmi.2005.08.068

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title = "Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition",

abstract = "We have investigated intentionally undoped p-type ZnO films grown on Si(111) substrates by pulsed-laser deposition as a function of the oxygen pressure. It is shown that the undoped ZnO films experience type conversion from n-type to p-type when the oxygen pressure changes from 7.98×10 -3 to 3.99×10-2 Pa. Ti/Au contacts give ohmic behaviour to n-type ZnO (∼1017 cm-3), but leaky Schottky behaviour to p-type ZnO (∼1018 cm-3). It is argued based on PL results that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.",

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AU - Oh, Min Suk

AU - Kim, Sang Ho

AU - Park, Seong Ju

AU - Seong, Tae Yeon

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N2 - We have investigated intentionally undoped p-type ZnO films grown on Si(111) substrates by pulsed-laser deposition as a function of the oxygen pressure. It is shown that the undoped ZnO films experience type conversion from n-type to p-type when the oxygen pressure changes from 7.98×10 -3 to 3.99×10-2 Pa. Ti/Au contacts give ohmic behaviour to n-type ZnO (∼1017 cm-3), but leaky Schottky behaviour to p-type ZnO (∼1018 cm-3). It is argued based on PL results that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

AB - We have investigated intentionally undoped p-type ZnO films grown on Si(111) substrates by pulsed-laser deposition as a function of the oxygen pressure. It is shown that the undoped ZnO films experience type conversion from n-type to p-type when the oxygen pressure changes from 7.98×10 -3 to 3.99×10-2 Pa. Ti/Au contacts give ohmic behaviour to n-type ZnO (∼1017 cm-3), but leaky Schottky behaviour to p-type ZnO (∼1018 cm-3). It is argued based on PL results that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

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IS - 1-4

T2 - E-MRS 2005 Symposium G: ZnO and Related Materials Part 2

Y2 - 31 May 2005 through 3 June 2005

ER -

Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition

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