Abstract
Linear defects (dislocations) not only govern the mechanical properties of crystalline solids but they can also produce distinct electronic, thermal, and topological effects. Accessing this functionality requires control over the placement and geometry of single dislocations embedded in a small host volume to maximize emerging effects. Here we identify a synthetic route for rational dislocation placement and tuning in van der Waals nanowires, where the layered crystal limits the possible defect configurations and the nanowire architecture puts single dislocations in close proximity to the entire host volume. While homogeneous layered nanowires host single screw dislocations, the synthesis of radial nanowire heterostructures (here exemplified by GeS-Ge1-xSnxS monochalcogenide core-shell nanowires) transforms the defect into a mixed (helical) dislocation whose edge/screw ratio is tunable via the core-shell lattice mismatch. The ability to design nanomaterials with control over individual mixed dislocations paves the way for identifying the functional properties of dislocations and harnessing them in technology.
| Original language | English |
|---|---|
| Pages (from-to) | 20503-20510 |
| Number of pages | 8 |
| Journal | Journal of the American Chemical Society |
| Volume | 145 |
| Issue number | 37 |
| DOIs | |
| State | Published - Sep 20 2023 |
Funding
National Science Foundation grant no. DMR-1904843 (P.S., E.S.), National Science Foundation grant no. DMR-2315397 (P.S., E.S.), and U.S. Department of Energy, Office of Science contract no. DE-AC05-00OR22725 (R.R.U., through CNMS/ORNL). This work was supported by the National Science Foundation, Division of Materials Research, Solid State and Materials Chemistry Program under grant nos. DMR-1904843 and DMR-2315397. STEM-EDS measurements were supported by the Center for Nanophase Materials Sciences (CNMS), which is a U.S. Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory.