Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN

Minglei Sun; Jyh Pin Chou; Qingqiang Ren; Yiming Zhao; Jin Yu; Wencheng Tang

doi:10.1063/1.4982690

Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN

Minglei Sun, Jyh Pin Chou, Qingqiang Ren, Yiming Zhao, Jin Yu, Wencheng Tang

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181 Scopus citations

Abstract

Using first-principles calculations, we systematically investigated the electronic properties of graphene/g-GaN van der Waals (vdW) heterostructures. We discovered that the Dirac cone of graphene could be quite well preserved in the vdW heterostructures. Moreover, a transition from an n-type to p-type Schottky contact at the graphene/g-GaN interface was induced with a decreased interlayer distance from 4.5 to 2.5 Å. This relationship is expected to enable effective control of the Schottky barrier, which is an important development in the design of Schottky devices.

Original language	English
Article number	173105
Journal	Applied Physics Letters
Volume	110
Issue number	17
DOIs	https://doi.org/10.1063/1.4982690
State	Published - Apr 24 2017
Externally published	Yes

Funding

This research was supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (2016ZX04004008). It was also supported by the Scientific Research Foundation of Graduate School of Southeast University (YBPY1602).

Funders	Funder number
Scientific Research Foundation of the Graduate School of Southeast University	YBPY1602
National Science and Technology Major Project	2016ZX04004008

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abstract = "Using first-principles calculations, we systematically investigated the electronic properties of graphene/g-GaN van der Waals (vdW) heterostructures. We discovered that the Dirac cone of graphene could be quite well preserved in the vdW heterostructures. Moreover, a transition from an n-type to p-type Schottky contact at the graphene/g-GaN interface was induced with a decreased interlayer distance from 4.5 to 2.5 {\AA}. This relationship is expected to enable effective control of the Schottky barrier, which is an important development in the design of Schottky devices.",

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AU - Sun, Minglei

AU - Chou, Jyh Pin

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AU - Zhao, Yiming

AU - Yu, Jin

AU - Tang, Wencheng

PY - 2017/4/24

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AB - Using first-principles calculations, we systematically investigated the electronic properties of graphene/g-GaN van der Waals (vdW) heterostructures. We discovered that the Dirac cone of graphene could be quite well preserved in the vdW heterostructures. Moreover, a transition from an n-type to p-type Schottky contact at the graphene/g-GaN interface was induced with a decreased interlayer distance from 4.5 to 2.5 Å. This relationship is expected to enable effective control of the Schottky barrier, which is an important development in the design of Schottky devices.

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Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN

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