Tunable asymmetric magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 lateral spin valve

Xiangyu Zeng; Ge Ye; Fazhi Yang; Qikai Ye; Liang Zhang; Boyang Ma; Yulu Liu; Mengwei Xie; Yan Liu; Xiaozhi Wang; Yue Hao; Genquan Han

doi:10.1039/d3nr04069k

Tunable asymmetric magnetoresistance in an Fe₃GeTe₂/graphite/Fe₃GeTe₂ lateral spin valve

Xiangyu Zeng, Ge Ye, Fazhi Yang, Qikai Ye, Liang Zhang, Boyang Ma, Yulu Liu, Mengwei Xie, Yan Liu, Xiaozhi Wang, Yue Hao, Genquan Han

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

van der Waals (vdW) ferromagnetic heterojunctions, characterized by an ultraclean device interface and the absence of lattice matching, have emerged as indispensable and efficient building blocks for future spintronic devices. In this study, we present a seldom observed antisymmetric magnetoresistance (MR) behavior with three distinctive resistance states in a lateral van der Waals (vdW) structure comprising Fe₃GeTe₂ (FGT)/graphite/FGT. In contrast to traditional spin valves governed by the magnetization configurations of ferromagnetic electrodes (FEs), this distinct feature can be attributed to the interaction between FGT and the FGT/graphite interface, which is primarily influenced by the internal spin-momentum locking effect. Furthermore, modulation of the MR behavior is accomplished by employing the coupling between antiferromagnetic and ferromagnetic materials to adjust the coercive fields of two FEs subsequent to the in situ growth of an FGT oxide layer on FGT. This study elucidates the device physics and mechanism of property modulation in lateral spin valves and holds the potential for advancing the development of gate-tunable spintronic devices and next-generation integrated circuits.

Original language	English
Pages (from-to)	19480-19485
Number of pages	6
Journal	Nanoscale
Volume	15
Issue number	48
DOIs	https://doi.org/10.1039/d3nr04069k
State	Published - Nov 15 2023
Externally published	Yes

Funding

This work was supported by the following programs: the National Natural Science Foundation of China (62304166, 62174147, 21927810, 62025402, 62090033, 91964202, 92064003, 92264202 and 62293522), the Fundamental Research Funds for the Central Universities (XJSJ23008, QTZX23040, QTZX23079), the Key Research and Development Project of Zhejiang (2022C01141), the Dr Li Dak Sum & Yip Yio Chin Development Fund for Regenerative Medicine, Zhejiang University, Natural Science Basic Research Program of Shanxi (2023JC-XJ-01), the National Key R&D Program of China (No. 2022ZD0119002), and the Major Program of Zhejiang Natural Science Foundation (DT23F0402). The authors gratefully acknowledge the support of Prof. Xin Lu at Zhejiang University and the Zhejiang University Micro-nano Fabrication Center.

Funders	Funder number
Dr Li Dak Sum & Yip Yio Chin Development Fund for Regenerative Medicine
Key Research and Development Project of Zhejiang	2022C01141
Major Program of Zhejiang Natural Science Foundation	DT23F0402
Zhejiang University Micro-nano Fabrication Center
National Natural Science Foundation of China	62174147, 62293522, 21927810, 92264202, 62025402, 92064003, 62090033, 62304166, 91964202
National Natural Science Foundation of China
Zhejiang University
National Key Research and Development Program of China	2022ZD0119002
National Key Research and Development Program of China
Fundamental Research Funds for the Central Universities	QTZX23040, QTZX23079, XJSJ23008
Fundamental Research Funds for the Central Universities
Natural Science Basic Research Program of Shaanxi Province	2023JC-XJ-01
Natural Science Basic Research Program of Shaanxi Province

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title = "Tunable asymmetric magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 lateral spin valve",

abstract = "van der Waals (vdW) ferromagnetic heterojunctions, characterized by an ultraclean device interface and the absence of lattice matching, have emerged as indispensable and efficient building blocks for future spintronic devices. In this study, we present a seldom observed antisymmetric magnetoresistance (MR) behavior with three distinctive resistance states in a lateral van der Waals (vdW) structure comprising Fe3GeTe2 (FGT)/graphite/FGT. In contrast to traditional spin valves governed by the magnetization configurations of ferromagnetic electrodes (FEs), this distinct feature can be attributed to the interaction between FGT and the FGT/graphite interface, which is primarily influenced by the internal spin-momentum locking effect. Furthermore, modulation of the MR behavior is accomplished by employing the coupling between antiferromagnetic and ferromagnetic materials to adjust the coercive fields of two FEs subsequent to the in situ growth of an FGT oxide layer on FGT. This study elucidates the device physics and mechanism of property modulation in lateral spin valves and holds the potential for advancing the development of gate-tunable spintronic devices and next-generation integrated circuits.",

author = "Xiangyu Zeng and Ge Ye and Fazhi Yang and Qikai Ye and Liang Zhang and Boyang Ma and Yulu Liu and Mengwei Xie and Yan Liu and Xiaozhi Wang and Yue Hao and Genquan Han",

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year = "2023",

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day = "15",

doi = "10.1039/d3nr04069k",

language = "English",

volume = "15",

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T1 - Tunable asymmetric magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 lateral spin valve

AU - Zeng, Xiangyu

AU - Ye, Ge

AU - Yang, Fazhi

AU - Ye, Qikai

AU - Zhang, Liang

AU - Ma, Boyang

AU - Liu, Yulu

AU - Xie, Mengwei

AU - Liu, Yan

AU - Wang, Xiaozhi

AU - Hao, Yue

AU - Han, Genquan

PY - 2023/11/15

Y1 - 2023/11/15

N2 - van der Waals (vdW) ferromagnetic heterojunctions, characterized by an ultraclean device interface and the absence of lattice matching, have emerged as indispensable and efficient building blocks for future spintronic devices. In this study, we present a seldom observed antisymmetric magnetoresistance (MR) behavior with three distinctive resistance states in a lateral van der Waals (vdW) structure comprising Fe3GeTe2 (FGT)/graphite/FGT. In contrast to traditional spin valves governed by the magnetization configurations of ferromagnetic electrodes (FEs), this distinct feature can be attributed to the interaction between FGT and the FGT/graphite interface, which is primarily influenced by the internal spin-momentum locking effect. Furthermore, modulation of the MR behavior is accomplished by employing the coupling between antiferromagnetic and ferromagnetic materials to adjust the coercive fields of two FEs subsequent to the in situ growth of an FGT oxide layer on FGT. This study elucidates the device physics and mechanism of property modulation in lateral spin valves and holds the potential for advancing the development of gate-tunable spintronic devices and next-generation integrated circuits.

AB - van der Waals (vdW) ferromagnetic heterojunctions, characterized by an ultraclean device interface and the absence of lattice matching, have emerged as indispensable and efficient building blocks for future spintronic devices. In this study, we present a seldom observed antisymmetric magnetoresistance (MR) behavior with three distinctive resistance states in a lateral van der Waals (vdW) structure comprising Fe3GeTe2 (FGT)/graphite/FGT. In contrast to traditional spin valves governed by the magnetization configurations of ferromagnetic electrodes (FEs), this distinct feature can be attributed to the interaction between FGT and the FGT/graphite interface, which is primarily influenced by the internal spin-momentum locking effect. Furthermore, modulation of the MR behavior is accomplished by employing the coupling between antiferromagnetic and ferromagnetic materials to adjust the coercive fields of two FEs subsequent to the in situ growth of an FGT oxide layer on FGT. This study elucidates the device physics and mechanism of property modulation in lateral spin valves and holds the potential for advancing the development of gate-tunable spintronic devices and next-generation integrated circuits.

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JO - Nanoscale

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ER -

Tunable asymmetric magnetoresistance in an Fe₃GeTe₂/graphite/Fe₃GeTe₂ lateral spin valve

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