Transport properties of hole-doped CuBiS2

David Parker; David J. Singh

doi:10.1103/PhysRevB.83.233206

Transport properties of hole-doped CuBiS₂

David Parker, David J. Singh

Materials Theory

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We present the results of density-functional theory and Boltzmann transport calculations suggesting that hole-doped CuBiS₂-a material commonly available as a mineral and comprised of relatively inexpensive elements-may show good thermoelectric performance at ambient temperature.

Original language	English
Article number	233206
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	83
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.83.233206
State	Published - Jun 17 2011

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Transport properties of hole-doped CuBiS₂

Abstract

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