Transport and structural characterization of epitaxial Nd1+xBa2-xCu3Oy thin films grown on LaAlO3 and Ni metal substrates by pulsed-laser deposition

C. Cantoni; D. P. Norton; D. K. Christen; A. Goyal; D. M. Kroeger; D. T. Verebelyi; M. Paranthaman

doi:10.1016/S0921-4534(99)00498-0

Transport and structural characterization of epitaxial Nd_1+xBa_2-xCu₃O_y thin films grown on LaAlO₃ and Ni metal substrates by pulsed-laser deposition

C. Cantoni, D. P. Norton, D. K. Christen, A. Goyal, D. M. Kroeger, D. T. Verebelyi, M. Paranthaman

Nanomaterials Chemistry Group

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18 Scopus citations

Abstract

The epitaxial growth and properties of Nd_1+xBa_2-xCu₃O_y (NdBCO) thin films using pulsed-laser deposition are reported. Thin films on single crystal LaAlO₃ having T_c0 = 93 K and J_c(H = 0, T = 77 K) = 3 MA/cm² were reproducibly fabricated. NdBCO films were subsequently grown on textured Ni substrates on which a YSZ/CeO₂ buffer-layer architecture was previously deposited by the same PLD technique. X-ray diffraction data showed a high degree of in-plane and out-of-plane alignment for the different layers of these coated conductors. Electron diffraction analysis of the NdBCO film revealed dense morphology and low-angle grain boundaries (≤3°). Direct current transport measurements yielded a J_c of about 300 kA/cm² at zero field and 77 K. J_c dependence on the field intensity and orientation revealed enhanced pinning at high fields with respect to YBCO and NdBCO films on LaAlO₃.

Original language	English
Pages (from-to)	177-186
Number of pages	10
Journal	Physica C: Superconductivity and its Applications
Volume	324
Issue number	3
DOIs	https://doi.org/10.1016/S0921-4534(99)00498-0
State	Published - Nov 1 1999

Funding

This research was supported in part by an appointment to the Postgraduate Research Program at Oak Ridge National Laboratory, managed by Lockheed Martin Energy Research, for the U.S. Department of Energy under Contract No. DE-AC05-96OR22464, and administered by the Oak Ridge Institute for Science and Education.

Funders	Funder number
Lockheed Martin Energy Research
U.S. Department of Energy	DE-AC05-96OR22464
Oak Ridge National Laboratory
Oak Ridge Institute for Science and Education

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Cantoni, C., Norton, D. P., Christen, D. K., Goyal, A., Kroeger, D. M., Verebelyi, D. T., & Paranthaman, M. (1999). Transport and structural characterization of epitaxial Nd_1+xBa_2-xCu₃O_y thin films grown on LaAlO₃ and Ni metal substrates by pulsed-laser deposition. Physica C: Superconductivity and its Applications, 324(3), 177-186. https://doi.org/10.1016/S0921-4534(99)00498-0

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title = "Transport and structural characterization of epitaxial Nd1+xBa2-xCu3Oy thin films grown on LaAlO3 and Ni metal substrates by pulsed-laser deposition",

abstract = "The epitaxial growth and properties of Nd1+xBa2-xCu3Oy (NdBCO) thin films using pulsed-laser deposition are reported. Thin films on single crystal LaAlO3 having Tc0 = 93 K and Jc(H = 0, T = 77 K) = 3 MA/cm2 were reproducibly fabricated. NdBCO films were subsequently grown on textured Ni substrates on which a YSZ/CeO2 buffer-layer architecture was previously deposited by the same PLD technique. X-ray diffraction data showed a high degree of in-plane and out-of-plane alignment for the different layers of these coated conductors. Electron diffraction analysis of the NdBCO film revealed dense morphology and low-angle grain boundaries (≤3°). Direct current transport measurements yielded a Jc of about 300 kA/cm2 at zero field and 77 K. Jc dependence on the field intensity and orientation revealed enhanced pinning at high fields with respect to YBCO and NdBCO films on LaAlO3.",

author = "C. Cantoni and Norton, {D. P.} and Christen, {D. K.} and A. Goyal and Kroeger, {D. M.} and Verebelyi, {D. T.} and M. Paranthaman",

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Cantoni, C, Norton, DP, Christen, DK, Goyal, A, Kroeger, DM, Verebelyi, DT & Paranthaman, M 1999, 'Transport and structural characterization of epitaxial Nd_1+xBa_2-xCu₃O_y thin films grown on LaAlO₃ and Ni metal substrates by pulsed-laser deposition', Physica C: Superconductivity and its Applications, vol. 324, no. 3, pp. 177-186. https://doi.org/10.1016/S0921-4534(99)00498-0

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AU - Cantoni, C.

AU - Norton, D. P.

AU - Christen, D. K.

AU - Goyal, A.

AU - Kroeger, D. M.

AU - Verebelyi, D. T.

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N2 - The epitaxial growth and properties of Nd1+xBa2-xCu3Oy (NdBCO) thin films using pulsed-laser deposition are reported. Thin films on single crystal LaAlO3 having Tc0 = 93 K and Jc(H = 0, T = 77 K) = 3 MA/cm2 were reproducibly fabricated. NdBCO films were subsequently grown on textured Ni substrates on which a YSZ/CeO2 buffer-layer architecture was previously deposited by the same PLD technique. X-ray diffraction data showed a high degree of in-plane and out-of-plane alignment for the different layers of these coated conductors. Electron diffraction analysis of the NdBCO film revealed dense morphology and low-angle grain boundaries (≤3°). Direct current transport measurements yielded a Jc of about 300 kA/cm2 at zero field and 77 K. Jc dependence on the field intensity and orientation revealed enhanced pinning at high fields with respect to YBCO and NdBCO films on LaAlO3.

AB - The epitaxial growth and properties of Nd1+xBa2-xCu3Oy (NdBCO) thin films using pulsed-laser deposition are reported. Thin films on single crystal LaAlO3 having Tc0 = 93 K and Jc(H = 0, T = 77 K) = 3 MA/cm2 were reproducibly fabricated. NdBCO films were subsequently grown on textured Ni substrates on which a YSZ/CeO2 buffer-layer architecture was previously deposited by the same PLD technique. X-ray diffraction data showed a high degree of in-plane and out-of-plane alignment for the different layers of these coated conductors. Electron diffraction analysis of the NdBCO film revealed dense morphology and low-angle grain boundaries (≤3°). Direct current transport measurements yielded a Jc of about 300 kA/cm2 at zero field and 77 K. Jc dependence on the field intensity and orientation revealed enhanced pinning at high fields with respect to YBCO and NdBCO films on LaAlO3.

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Transport and structural characterization of epitaxial Nd_1+xBa_2-xCu₃O_y thin films grown on LaAlO₃ and Ni metal substrates by pulsed-laser deposition

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