Transmission electron microscopy of multi-layer InGaAs quantum wires grown on GaAs (311)A

G. D. Lian; M. B. Johnson; H. Wen; Z. M. Wang; G. Salamo; D. A. Blom; L. F. Allard

doi:10.1017/S1431927604886641

Transmission electron microscopy of multi-layer InGaAs quantum wires grown on GaAs (311)A

G. D. Lian, M. B. Johnson, H. Wen, Z. M. Wang, G. Salamo, D. A. Blom, L. F. Allard

Nuclear Energy Materials Microanalysis

Research output: Contribution to journal › Article › peer-review

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Original language	English
Pages (from-to)	530-531
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	10
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/S1431927604886641
State	Published - 2004

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title = "Transmission electron microscopy of multi-layer InGaAs quantum wires grown on GaAs (311)A",

author = "Lian, {G. D.} and Johnson, {M. B.} and H. Wen and Wang, {Z. M.} and G. Salamo and Blom, {D. A.} and Allard, {L. F.}",

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language = "English",

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journal = "Microscopy and Microanalysis",

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T1 - Transmission electron microscopy of multi-layer InGaAs quantum wires grown on GaAs (311)A

AU - Lian, G. D.

AU - Johnson, M. B.

AU - Wen, H.

AU - Wang, Z. M.

AU - Salamo, G.

AU - Blom, D. A.

AU - Allard, L. F.

PY - 2004

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DO - 10.1017/S1431927604886641

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JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - SUPPL. 2

ER -

Transmission electron microscopy of multi-layer InGaAs quantum wires grown on GaAs (311)A

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