Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

Jian Gao, Young Duck Kim, Liangbo Liang, Juan Carlos Idrobo, Phil Chow, Jiawei Tan, Baichang Li, Lu Li, Bobby G. Sumpter, Toh Ming Lu, Vincent Meunier, James Hone, Nikhil Koratkar

Research output: Contribution to journalArticlepeer-review

235 Scopus citations
Original languageEnglish
Pages (from-to)9735-9743
Number of pages9
JournalAdvanced Materials
Volume28
Issue number44
DOIs
StatePublished - Nov 2016

Funding

N.K. acknowledges funding support from the USA National Science Foundation (Award Numbers: 1435783, 1510828 and 1608171), New York State under NYSTAR program C080117, and from the John A. Clark and Edward T. Crossan Endowed Chair Professorship at the Rensselaer Polytechnic Institute (RPI). The theoretical work was also supported in part by the Office of Naval Research. The computations were performed using the resources of the Center for Computational Innovation at RPI. L.L. was supported as a Eugene P. Wigner Fellow at Oak Ridge National Laboratory. J.H. and Y.D.K. acknowledge support from the NSF MRSEC program through Columbia in the Center for Precision Assembly of Superstratic and Superatomic Solids (DMR-1420634). Microscopy research was conducted as part of a user proposal through ORNL's Center for Nanophase Materials Sciences, which is a U.S. Department of Energy, Office of Science User Facility (J.C.I.).

Keywords

  • band structure
  • chemical vapor deposition
  • electronic properties
  • monolayer transition-metal dichalcogenides
  • transition-metal doping

Cite this