Original language | English |
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Pages (from-to) | 9735-9743 |
Number of pages | 9 |
Journal | Advanced Materials |
Volume | 28 |
Issue number | 44 |
DOIs | |
State | Published - Nov 2016 |
Funding
N.K. acknowledges funding support from the USA National Science Foundation (Award Numbers: 1435783, 1510828 and 1608171), New York State under NYSTAR program C080117, and from the John A. Clark and Edward T. Crossan Endowed Chair Professorship at the Rensselaer Polytechnic Institute (RPI). The theoretical work was also supported in part by the Office of Naval Research. The computations were performed using the resources of the Center for Computational Innovation at RPI. L.L. was supported as a Eugene P. Wigner Fellow at Oak Ridge National Laboratory. J.H. and Y.D.K. acknowledge support from the NSF MRSEC program through Columbia in the Center for Precision Assembly of Superstratic and Superatomic Solids (DMR-1420634). Microscopy research was conducted as part of a user proposal through ORNL's Center for Nanophase Materials Sciences, which is a U.S. Department of Energy, Office of Science User Facility (J.C.I.).
Keywords
- band structure
- chemical vapor deposition
- electronic properties
- monolayer transition-metal dichalcogenides
- transition-metal doping