Transient GaAs plasmonic metasurfaces at terahertz frequencies

Yuanmu Yang; N. Kamaraju; Salvatore Campione; Sheng Liu; John L. Reno; Michael B. Sinclair; Rohit P. Prasankumar; Igal Brener

doi:10.1021/acsphotonics.6b00735

Transient GaAs plasmonic metasurfaces at terahertz frequencies

Yuanmu Yang
, N. Kamaraju
, Salvatore Campione
, Sheng Liu
, John L. Reno
, Michael B. Sinclair
, Rohit P. Prasankumar
, Igal Brener

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

We demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron− phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. The platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.

Original language	English
Pages (from-to)	15-21
Number of pages	7
Journal	ACS Photonics
Volume	4
Issue number	1
DOIs	https://doi.org/10.1021/acsphotonics.6b00735
State	Published - Jan 18 2017
Externally published	Yes

Funding

The authors thank P. Q. Liu of Sandia National Laboratories for stimulating discussions and M. R. C. Williams of Los Alamos National Laboratory for assistance in the sample measurements. This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, and performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multimission laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-AC04-94AL85000.

Keywords

Metasurface
Perfect absorber
Semiconductor
Ultrafast plasmonics

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title = "Transient GaAs plasmonic metasurfaces at terahertz frequencies",

abstract = "We demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron− phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. The platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.",

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author = "Yuanmu Yang and N. Kamaraju and Salvatore Campione and Sheng Liu and Reno, \{John L.\} and Sinclair, \{Michael B.\} and Prasankumar, \{Rohit P.\} and Igal Brener",

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AU - Yang, Yuanmu

AU - Kamaraju, N.

AU - Campione, Salvatore

AU - Liu, Sheng

AU - Reno, John L.

AU - Sinclair, Michael B.

AU - Prasankumar, Rohit P.

AU - Brener, Igal

PY - 2017/1/18

Y1 - 2017/1/18

N2 - We demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron− phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. The platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.

AB - We demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron− phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. The platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.

KW - Metasurface

KW - Perfect absorber

KW - Semiconductor

KW - Ultrafast plasmonics

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JO - ACS Photonics

JF - ACS Photonics

IS - 1

ER -

Transient GaAs plasmonic metasurfaces at terahertz frequencies

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Keywords

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