Transient current analysis of a GaN radiation detector by TCAD

Jinghui Wang, Padhraic L. Mulligan, Lei R. Cao

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A gallium nitride (GaN) Schottky diode radiation detector has been fabricated with a successfully demonstrated radiation response to alpha particles and neutrons when using Li as a convertor. In order to understand the charge collection process for further device modification, the Sentaurus TCAD software package is employed to quantitatively study the transient current produced by energetic charge particles. By comparing the simulation and experimental results, especially the capacitance-voltage relationship and charge collection efficiency, the device parameters and physics models used for the simulation are validated. The time behavior of the transient current is studied, and the carrier generation/loss by impact ionization, recombination, and trapping are discussed. The total collected charge contributed by various components, such as drift, funneling, and diffusion are also analyzed.

Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume761
DOIs
StatePublished - Oct 11 2014
Externally publishedYes

Funding

This research is being performed using funding received from the U.S. DOE Office of Nuclear Energy׳s Nuclear Energy University Programs (Grant no. DE-AC07-051D14517 ). The first author, Jinghui Wang, is partially supported by a scholarship from China Scholarship Council.

FundersFunder number
DOE Office of Nuclear EnergyDE-AC07-051D14517
China Scholarship Council

    Keywords

    • Charge collection efficiency
    • GaN
    • Radiation detector
    • TCAD
    • Transient current

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