Transformation of 2D group-III selenides to ultra-thin nitrides: Enabling epitaxy on amorphous substrates

Natalie Briggs; Maria Isolina Preciado; Yanfu Lu; Ke Wang; Jacob Leach; Xufan Li; Kai Xiao; Shruti Subramanian; Baoming Wang; Aman Haque; Susan Sinnott; Joshua A. Robinson

doi:10.1088/1361-6528/aae0bb

Transformation of 2D group-III selenides to ultra-thin nitrides: Enabling epitaxy on amorphous substrates

Natalie Briggs, Maria Isolina Preciado, Yanfu Lu, Ke Wang, Jacob Leach, Xufan Li, Kai Xiao, Shruti Subramanian, Baoming Wang, Aman Haque, Susan Sinnott, Joshua A. Robinson

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.

Original language	English
Article number	47LT02
Journal	Nanotechnology
Volume	29
Issue number	47
DOIs	https://doi.org/10.1088/1361-6528/aae0bb
State	Published - Sep 28 2018

Funding

This research was supported by the Army Research Office (Grant # W911NF1510488) and the 2D Crystal Consortium NSF Materials Innovation Platform under cooperative agreement DMR-1539916. JAR and SS acknowledge NSF support through the CAREER Grant 1453924. Synthesis of the GaSe precursor and some mono/few-layer GaSe was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. This research was supported by the Army Research Office (Grant # W911NF1510488) and the 2D Crystal Consortium NSF Materials Innovation Platform under cooperative agreement DMR-1539916. JAR and SS acknowledge NSF support through the CAREER Grant 1453924. Synthesis of the GaSe precursor and some mono/few-layer GaSe was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. Special thanks to Jeffrey R Shallenberger and the Penn State Materials Characterization Laboratory for contributing synthetic x-ray photoelectron spectra.

Keywords

2D materials
ammonolysis
epitaxy
gallium selenide
nitrides

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@article{1c1e231278dd46ee89f9083fb2705e74,

title = "Transformation of 2D group-III selenides to ultra-thin nitrides: Enabling epitaxy on amorphous substrates",

abstract = "The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.",

keywords = "2D materials, ammonolysis, epitaxy, gallium selenide, nitrides",

author = "Natalie Briggs and Preciado, \{Maria Isolina\} and Yanfu Lu and Ke Wang and Jacob Leach and Xufan Li and Kai Xiao and Shruti Subramanian and Baoming Wang and Aman Haque and Susan Sinnott and Robinson, \{Joshua A.\}",

note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

year = "2018",

month = sep,

day = "28",

doi = "10.1088/1361-6528/aae0bb",

language = "English",

volume = "29",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing",

number = "47",

}

TY - JOUR

T1 - Transformation of 2D group-III selenides to ultra-thin nitrides

T2 - Enabling epitaxy on amorphous substrates

AU - Briggs, Natalie

AU - Preciado, Maria Isolina

AU - Lu, Yanfu

AU - Wang, Ke

AU - Leach, Jacob

AU - Li, Xufan

AU - Xiao, Kai

AU - Subramanian, Shruti

AU - Wang, Baoming

AU - Haque, Aman

AU - Sinnott, Susan

AU - Robinson, Joshua A.

PY - 2018/9/28

Y1 - 2018/9/28

N2 - The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.

AB - The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.

KW - 2D materials

KW - ammonolysis

KW - epitaxy

KW - gallium selenide

KW - nitrides

UR - https://www.scopus.com/pages/publications/85054363019

U2 - 10.1088/1361-6528/aae0bb

DO - 10.1088/1361-6528/aae0bb

M3 - Article

C2 - 30207301

AN - SCOPUS:85054363019

SN - 0957-4484

VL - 29

JO - Nanotechnology

JF - Nanotechnology

IS - 47

M1 - 47LT02

ER -

Transformation of 2D group-III selenides to ultra-thin nitrides: Enabling epitaxy on amorphous substrates

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