Abstract
An isotopic tracer study of the film growth mechanism for pure magnesium, AZ31B, and ZE10A (Elektron 717, E717) magnesium alloys in water at room temperature was performed. A series of individual and sequential exposures were conducted in both H2 18O and D2 16O, with isotopic tracer profiles obtained using secondary ion mass spectrometry (SIMS). The water-formed films consisted primarily of partially hydrated MgO. The SIMS sputter depth profiles indicate that H and D penetrated throughout the film and into the underlying metal, particularly for the Zr- and Nd-containing E717 alloy. Film growth for the UHP Mg involved aspects of both metal outward diffusion and oxygen/hydrogen inward diffusion. In contrast, the film on the Al-containing AZ31B alloy grew primarily by inward oxygen and inward hydrogen diffusion. The 18O and D profiles for the film formed on E717 were the most complex, with the 18O data most consistent with inward lattice oxygen diffusion, but the D data suggests inward, short-circuit diffusion through the film. It is speculated that preferential inward short circuit hydrogen transport may have been aided by the presence of nano Zn 2Zr3 particles throughout the E717 film. Such hydrogen penetration may have implications from both a corrosion resistance and hydrogen storage perspective.
Original language | English |
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Pages (from-to) | C395-C404 |
Journal | Journal of the Electrochemical Society |
Volume | 161 |
Issue number | 9 |
DOIs | |
State | Published - 2014 |