TY - GEN
T1 - Towards fully integrated high temperature wireless sensors using GaN-based HEMT devices
AU - Huque, Mohammed Aminul
AU - Islam, Syed Kamrul
AU - Kuruganti, Phani Teja
PY - 2008
Y1 - 2008
N2 - Wireless sensors that are capable of working in extreme environments can significantly improve the efficiency and performance of industrial processes by facilitating better monitoring and control. Gallium Nitride (GaN), a widely researched wide bandgap material, can potentially be used to fabricate components for sensing and actuation for high temperature integrated wireless sensors. In this paper we are presenting an experimental study on the performance of AlGaN/GaN HEMT at high temperatures (up to 300°C). From test results, DC and microwave parameters at different temperatures were extracted.
AB - Wireless sensors that are capable of working in extreme environments can significantly improve the efficiency and performance of industrial processes by facilitating better monitoring and control. Gallium Nitride (GaN), a widely researched wide bandgap material, can potentially be used to fabricate components for sensing and actuation for high temperature integrated wireless sensors. In this paper we are presenting an experimental study on the performance of AlGaN/GaN HEMT at high temperatures (up to 300°C). From test results, DC and microwave parameters at different temperatures were extracted.
UR - http://www.scopus.com/inward/record.url?scp=54249144079&partnerID=8YFLogxK
U2 - 10.1109/MWSCAS.2008.4616866
DO - 10.1109/MWSCAS.2008.4616866
M3 - Conference contribution
AN - SCOPUS:54249144079
SN - 9781424421671
T3 - Midwest Symposium on Circuits and Systems
SP - 582
EP - 585
BT - 2008 IEEE International 51st Midwest Symposium on Circuits and Systems, MWSCAS
T2 - 2008 IEEE International 51st Midwest Symposium on Circuits and Systems, MWSCAS
Y2 - 10 August 2008 through 13 August 2008
ER -