Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAsyP1-y buffers

T. J. Grassman; M. R. Brenner; A. M. Carlin; S. Rajagopalan; R. Unocic; R. Dehoff; M. Mills; H. Fraser; S. A. Ringel

doi:10.1109/PVSC.2009.5411489

Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAs_yP_1-y buffers

T. J. Grassman, M. R. Brenner, A. M. Carlin, S. Rajagopalan, R. Unocic, R. Dehoff, M. Mills, H. Fraser, S. A. Ringel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

Using migration enhanced epitaxy nucleation followed by molecular beam epitaxy bulk growth on pristine, intentionally offcut Si(001) substrates, we have produced high-quality GaP/Si virtual substrates, successfully demonstrating full control and elimination of heterovalent nucleation-related defects (antiphase domains, stacking faults, and microtwins). These virtual substrates provide a pathway to direct integration of III-V photovoltaic materials and devices on Si substrates. Prototype GaAsP solar cell test devices grown on anion-sublattice step-graded GaAsyP1-y buffers on early-stage GaP/Si substrates show good preliminary performance characteristics and offer great promise for future devices integrated with the newly-developed defect-free GaP/Si virtual substrates.

Original language	English
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	2016-2021
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2009.5411489
State	Published - 2009
Externally published	Yes
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: Jun 7 2009 → Jun 12 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	06/7/09 → 06/12/09

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2009.5411489

Cite this

Grassman, T. J., Brenner, M. R., Carlin, A. M., Rajagopalan, S., Unocic, R., Dehoff, R., Mills, M., Fraser, H., & Ringel, S. A. (2009). Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAs_yP_1-y buffers. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 2016-2021). Article 5411489 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411489

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title = "Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAsyP1-y buffers",

abstract = "Using migration enhanced epitaxy nucleation followed by molecular beam epitaxy bulk growth on pristine, intentionally offcut Si(001) substrates, we have produced high-quality GaP/Si virtual substrates, successfully demonstrating full control and elimination of heterovalent nucleation-related defects (antiphase domains, stacking faults, and microtwins). These virtual substrates provide a pathway to direct integration of III-V photovoltaic materials and devices on Si substrates. Prototype GaAsP solar cell test devices grown on anion-sublattice step-graded GaAsyP1-y buffers on early-stage GaP/Si substrates show good preliminary performance characteristics and offer great promise for future devices integrated with the newly-developed defect-free GaP/Si virtual substrates.",

author = "Grassman, {T. J.} and Brenner, {M. R.} and Carlin, {A. M.} and S. Rajagopalan and R. Unocic and R. Dehoff and M. Mills and H. Fraser and Ringel, {S. A.}",

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doi = "10.1109/PVSC.2009.5411489",

language = "English",

isbn = "9781424429509",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "2016--2021",

booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

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Grassman, TJ, Brenner, MR, Carlin, AM, Rajagopalan, S, Unocic, R, Dehoff, R, Mills, M, Fraser, H & Ringel, SA 2009, Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAs_yP_1-y buffers. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411489, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2016-2021, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 06/7/09. https://doi.org/10.1109/PVSC.2009.5411489

Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAs_yP_1-y buffers. / Grassman, T. J.; Brenner, M. R.; Carlin, A. M. et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 2016-2021 5411489 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Using migration enhanced epitaxy nucleation followed by molecular beam epitaxy bulk growth on pristine, intentionally offcut Si(001) substrates, we have produced high-quality GaP/Si virtual substrates, successfully demonstrating full control and elimination of heterovalent nucleation-related defects (antiphase domains, stacking faults, and microtwins). These virtual substrates provide a pathway to direct integration of III-V photovoltaic materials and devices on Si substrates. Prototype GaAsP solar cell test devices grown on anion-sublattice step-graded GaAsyP1-y buffers on early-stage GaP/Si substrates show good preliminary performance characteristics and offer great promise for future devices integrated with the newly-developed defect-free GaP/Si virtual substrates.

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Grassman TJ, Brenner MR, Carlin AM, Rajagopalan S, Unocic R, Dehoff R et al. Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAs_yP_1-y buffers. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 2016-2021. 5411489. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2009.5411489