Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

En Xia Zhang; Daniel M. Fleetwood; Jordan A. Hachtel; Chundong Liang; Robert A. Reed; Michael L. Alles; Ronald D. Schrimpf; Dimitri Linten; Jerome Mitard; Matthew F. Chisholm; Sokrates T. Pantelides

doi:10.1109/TNS.2016.2635023

Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

En Xia Zhang, Daniel M. Fleetwood, Jordan A. Hachtel, Chundong Liang, Robert A. Reed, Michael L. Alles, Ronald D. Schrimpf, Dimitri Linten, Jerome Mitard, Matthew F. Chisholm, Sokrates T. Pantelides

electron Microscopy and Microanalysis

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We have characterized the total ionizing dose response of strained Ge pMOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad(SiO₂) show minimal transconductance degradation (less than 5%), very small V_th shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge pMOS FinFETs is far superior to that of past generations of planar Ge pMOS devices. These improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.

Original language	English
Article number	7765121
Pages (from-to)	226-232
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	64
Issue number	1
DOIs	https://doi.org/10.1109/TNS.2016.2635023
State	Published - Jan 2017

Funding

This work was supported by AFRL and AFOSR through the Hi-REV program and by the Defense Threat Reduction Agency through its Basic Research program. The work at Oak Ridge was supported by the Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. Additional support was provided from grant DE-FG02-09ER46554.

Funders	Funder number
U.S. Department of Energy
Air Force Office of Scientific Research
Defense Threat Reduction Agency
Office of Science
Basic Energy Sciences
Air Force Research Laboratory
Division of Materials Sciences and Engineering	DE-FG02-09ER46554

Keywords

10 keV X-ray
geometry dependence
germanium FinFETs
total ionizing dose

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10.1109/TNS.2016.2635023

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title = "Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si",

abstract = "We have characterized the total ionizing dose response of strained Ge pMOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad(SiO2) show minimal transconductance degradation (less than 5%), very small Vth shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge pMOS FinFETs is far superior to that of past generations of planar Ge pMOS devices. These improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.",

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AU - Zhang, En Xia

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AU - Liang, Chundong

AU - Reed, Robert A.

AU - Alles, Michael L.

AU - Schrimpf, Ronald D.

AU - Linten, Dimitri

AU - Mitard, Jerome

AU - Chisholm, Matthew F.

AU - Pantelides, Sokrates T.

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AB - We have characterized the total ionizing dose response of strained Ge pMOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad(SiO2) show minimal transconductance degradation (less than 5%), very small Vth shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge pMOS FinFETs is far superior to that of past generations of planar Ge pMOS devices. These improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.

KW - 10 keV X-ray

KW - geometry dependence

KW - germanium FinFETs

KW - total ionizing dose

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Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

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