Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si0.55Ge0.45 Source/Drain

Liang Wang; En Xia Zhang; Ronald D. Schrimpf; Daniel M. Fleetwood; Guo Xing Duan; Jordan A. Hachtel; Cher Xuan Zhang; Robert A. Reed; Isaak K. Samsel; Michael L. Alles; Liesbeth Witters; Nadine Collaert; DImitri Linten; Jerome Mitard; Matthew F. Chisholm; Sokrates T. Pantelides; Kenneth F. Galloway

doi:10.1109/TNS.2015.2489019

Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si_0.55Ge_0.45 Source/Drain

Liang Wang
, En Xia Zhang
, Ronald D. Schrimpf
, Daniel M. Fleetwood
, Guo Xing Duan
, Jordan A. Hachtel
, Cher Xuan Zhang
, Robert A. Reed
, Isaak K. Samsel
, Michael L. Alles
, Liesbeth Witters
, Nadine Collaert
, DImitri Linten
, Jerome Mitard
, Matthew F. Chisholm
, Sokrates T. Pantelides
, Kenneth F. Galloway

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The total ionizing dose response of Ge channel pFETs with raised source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

Original language	English
Article number	7348825
Pages (from-to)	2412-2416
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	62
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2015.2489019
State	Published - Dec 2015
Externally published	Yes

Keywords

Ge pFET
negative bias temperature instability (NBTI)
radiation-induced leakage
threshold-voltage shift
total ionizing dose (TID)
transconductance degradation

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10.1109/TNS.2015.2489019

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Wang, L., Zhang, E. X., Schrimpf, R. D., Fleetwood, D. M., Duan, G. X., Hachtel, J. A., Zhang, C. X., Reed, R. A., Samsel, I. K., Alles, M. L., Witters, L., Collaert, N., Linten, DI., Mitard, J., Chisholm, M. F., Pantelides, S. T., & Galloway, K. F. (2015). Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si_0.55Ge_0.45 Source/Drain. IEEE Transactions on Nuclear Science, 62(6), 2412-2416. Article 7348825. https://doi.org/10.1109/TNS.2015.2489019

@article{1d7ef5c678ce4f5da3d7073ca0612a63,

title = "Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si0.55Ge0.45 Source/Drain",

abstract = "The total ionizing dose response of Ge channel pFETs with raised source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.",

keywords = "Ge pFET, negative bias temperature instability (NBTI), radiation-induced leakage, threshold-voltage shift, total ionizing dose (TID), transconductance degradation",

author = "Liang Wang and Zhang, \{En Xia\} and Schrimpf, \{Ronald D.\} and Fleetwood, \{Daniel M.\} and Duan, \{Guo Xing\} and Hachtel, \{Jordan A.\} and Zhang, \{Cher Xuan\} and Reed, \{Robert A.\} and Samsel, \{Isaak K.\} and Alles, \{Michael L.\} and Liesbeth Witters and Nadine Collaert and DImitri Linten and Jerome Mitard and Chisholm, \{Matthew F.\} and Pantelides, \{Sokrates T.\} and Galloway, \{Kenneth F.\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2015",

month = dec,

doi = "10.1109/TNS.2015.2489019",

language = "English",

volume = "62",

pages = "2412--2416",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers",

number = "6",

}

Wang, L, Zhang, EX, Schrimpf, RD, Fleetwood, DM, Duan, GX, Hachtel, JA, Zhang, CX, Reed, RA, Samsel, IK, Alles, ML, Witters, L, Collaert, N, Linten, DI, Mitard, J, Chisholm, MF, Pantelides, ST & Galloway, KF 2015, 'Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si_0.55Ge_0.45 Source/Drain', IEEE Transactions on Nuclear Science, vol. 62, no. 6, 7348825, pp. 2412-2416. https://doi.org/10.1109/TNS.2015.2489019

TY - JOUR

T1 - Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si0.55Ge0.45 Source/Drain

AU - Wang, Liang

AU - Zhang, En Xia

AU - Schrimpf, Ronald D.

AU - Fleetwood, Daniel M.

AU - Duan, Guo Xing

AU - Hachtel, Jordan A.

AU - Zhang, Cher Xuan

AU - Reed, Robert A.

AU - Samsel, Isaak K.

AU - Alles, Michael L.

AU - Witters, Liesbeth

AU - Collaert, Nadine

AU - Linten, DImitri

AU - Mitard, Jerome

AU - Chisholm, Matthew F.

AU - Pantelides, Sokrates T.

AU - Galloway, Kenneth F.

PY - 2015/12

Y1 - 2015/12

N2 - The total ionizing dose response of Ge channel pFETs with raised source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

AB - The total ionizing dose response of Ge channel pFETs with raised source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

KW - Ge pFET

KW - negative bias temperature instability (NBTI)

KW - radiation-induced leakage

KW - threshold-voltage shift

KW - total ionizing dose (TID)

KW - transconductance degradation

UR - https://www.scopus.com/pages/publications/84961801792

U2 - 10.1109/TNS.2015.2489019

DO - 10.1109/TNS.2015.2489019

M3 - Article

AN - SCOPUS:84961801792

SN - 0018-9499

VL - 62

SP - 2412

EP - 2416

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

M1 - 7348825

ER -

Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si_0.55Ge_0.45 Source/Drain

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