Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si0.55Ge0.45 Source/Drain

Liang Wang; En Xia Zhang; Ronald D. Schrimpf; Daniel M. Fleetwood; Guo Xing Duan; Jordan A. Hachtel; Cher Xuan Zhang; Robert A. Reed; Isaak K. Samsel; Michael L. Alles; Liesbeth Witters; Nadine Collaert; DImitri Linten; Jerome Mitard; Matthew F. Chisholm; Sokrates T. Pantelides; Kenneth F. Galloway

doi:10.1109/TNS.2015.2489019

Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si_0.55Ge_0.45 Source/Drain

Liang Wang, En Xia Zhang, Ronald D. Schrimpf, Daniel M. Fleetwood, Guo Xing Duan, Jordan A. Hachtel, Cher Xuan Zhang, Robert A. Reed, Isaak K. Samsel, Michael L. Alles, Liesbeth Witters, Nadine Collaert, DImitri Linten, Jerome Mitard, Matthew F. Chisholm, Sokrates T. Pantelides, Kenneth F. Galloway

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Abstract

The total ionizing dose response of Ge channel pFETs with raised source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

Original language	English
Article number	7348825
Pages (from-to)	2412-2416
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	62
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2015.2489019
State	Published - Dec 2015
Externally published	Yes

Keywords

Ge pFET
negative bias temperature instability (NBTI)
radiation-induced leakage
threshold-voltage shift
total ionizing dose (TID)
transconductance degradation

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10.1109/TNS.2015.2489019

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Wang, L., Zhang, E. X., Schrimpf, R. D., Fleetwood, D. M., Duan, G. X., Hachtel, J. A., Zhang, C. X., Reed, R. A., Samsel, I. K., Alles, M. L., Witters, L., Collaert, N., Linten, DI., Mitard, J., Chisholm, M. F., Pantelides, S. T., & Galloway, K. F. (2015). Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si_0.55Ge_0.45 Source/Drain. IEEE Transactions on Nuclear Science, 62(6), 2412-2416. Article 7348825. https://doi.org/10.1109/TNS.2015.2489019

@article{1d7ef5c678ce4f5da3d7073ca0612a63,

title = "Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si0.55Ge0.45 Source/Drain",

abstract = "The total ionizing dose response of Ge channel pFETs with raised source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.",

keywords = "Ge pFET, negative bias temperature instability (NBTI), radiation-induced leakage, threshold-voltage shift, total ionizing dose (TID), transconductance degradation",

author = "Liang Wang and Zhang, {En Xia} and Schrimpf, {Ronald D.} and Fleetwood, {Daniel M.} and Duan, {Guo Xing} and Hachtel, {Jordan A.} and Zhang, {Cher Xuan} and Reed, {Robert A.} and Samsel, {Isaak K.} and Alles, {Michael L.} and Liesbeth Witters and Nadine Collaert and DImitri Linten and Jerome Mitard and Chisholm, {Matthew F.} and Pantelides, {Sokrates T.} and Galloway, {Kenneth F.}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2015",

month = dec,

doi = "10.1109/TNS.2015.2489019",

language = "English",

volume = "62",

pages = "2412--2416",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers",

number = "6",

}

Wang, L, Zhang, EX, Schrimpf, RD, Fleetwood, DM, Duan, GX, Hachtel, JA, Zhang, CX, Reed, RA, Samsel, IK, Alles, ML, Witters, L, Collaert, N, Linten, DI, Mitard, J, Chisholm, MF, Pantelides, ST & Galloway, KF 2015, 'Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si_0.55Ge_0.45 Source/Drain', IEEE Transactions on Nuclear Science, vol. 62, no. 6, 7348825, pp. 2412-2416. https://doi.org/10.1109/TNS.2015.2489019

TY - JOUR

T1 - Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si0.55Ge0.45 Source/Drain

AU - Wang, Liang

AU - Zhang, En Xia

AU - Schrimpf, Ronald D.

AU - Fleetwood, Daniel M.

AU - Duan, Guo Xing

AU - Hachtel, Jordan A.

AU - Zhang, Cher Xuan

AU - Reed, Robert A.

AU - Samsel, Isaak K.

AU - Alles, Michael L.

AU - Witters, Liesbeth

AU - Collaert, Nadine

AU - Linten, DImitri

AU - Mitard, Jerome

AU - Chisholm, Matthew F.

AU - Pantelides, Sokrates T.

AU - Galloway, Kenneth F.

PY - 2015/12

Y1 - 2015/12

N2 - The total ionizing dose response of Ge channel pFETs with raised source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

AB - The total ionizing dose response of Ge channel pFETs with raised source/drain is investigated under different radiation bias conditions. Threshold-voltage shifts and transconductance degradation are noticeable only for negative-bias (on state) irradiation, and are mainly due to negative bias-temperature instability (NBTI). Nonmonotonic leakage changes during irradiation are observed, which are attributed to the competition of radiation-induced field transistor leakage and S/D junction leakage.

KW - Ge pFET

KW - negative bias temperature instability (NBTI)

KW - radiation-induced leakage

KW - threshold-voltage shift

KW - total ionizing dose (TID)

KW - transconductance degradation

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U2 - 10.1109/TNS.2015.2489019

DO - 10.1109/TNS.2015.2489019

M3 - Article

AN - SCOPUS:84961801792

SN - 0018-9499

VL - 62

SP - 2412

EP - 2416

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

M1 - 7348825

ER -

Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si_0.55Ge_0.45 Source/Drain

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