@article{d91efda930ca4b53b3748b5cbaba42d8,
title = "Topological-metal to band-insulator transition in (Bi 1-xIn x) 2Se 3 thin films",
abstract = "By combining transport and photoemission measurements on (Bi 1-xIn x) 2Se 3 thin films, we report that this system transforms from a topologically nontrivial metal into a topologically trivial band insulator through three quantum phase transitions. At x≈3%-7%, there is a transition from a topologically nontrivial metal to a trivial metal. At x≈15%, the metal becomes a variable-range-hopping insulator. Finally, above x≈25%, the system becomes a true band insulator with its resistance immeasurably large even at room temperature. This material provides a new venue to investigate topologically tunable physics and devices with seamless gating or tunneling insulators.",
author = "Matthew Brahlek and Namrata Bansal and Nikesh Koirala and Xu, {Su Yang} and Madhab Neupane and Chang Liu and Hasan, {M. Zahid} and Seongshik Oh",
year = "2012",
month = oct,
day = "31",
doi = "10.1103/PhysRevLett.109.186403",
language = "English",
volume = "109",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "18",
}