Topological insulators Bi 2Te 3 and Bi 2Se 3 grown by MBE on (001) GaAs substrates

X. Liu; D. J. Smith; J. Fan; Y. H. Zhang; H. Cao; Y. P. Chen; B. J. Kirby; N. Sun; S. T. Ruggiero; J. Leiner; R. E. Pimpinella; J. Hagmann; K. Tivakornsasithorn; M. Dobrowolska; J. K. Furdyna

doi:10.1063/1.3671709

Topological insulators Bi ₂Te ₃ and Bi ₂Se ₃ grown by MBE on (001) GaAs substrates

X. Liu, D. J. Smith, J. Fan, Y. H. Zhang, H. Cao, Y. P. Chen, B. J. Kirby, N. Sun, S. T. Ruggiero, J. Leiner, R. E. Pimpinella, J. Hagmann, K. Tivakornsasithorn, M. Dobrowolska, J. K. Furdyna

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

Bi ₂Te ₃ Bi ₂Se ₃ and their alloy films were successfully grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The structural properties of these films were investigated by Reflection high-energy electron diffraction (RHEED), Atomic force microscopy (AFM), X-ray diffraction (XRD), High-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform. High-field and low-temperature magneto-transport measurements on these films are carried out and discussed.

Original language	English
Title of host publication	15th International Conference on Narrow Gap Systems, NGS15
Pages	105-108
Number of pages	4
DOIs	https://doi.org/10.1063/1.3671709
State	Published - 2011
Externally published	Yes
Event	15th International Conference on Narrow Gap Systems, NGS15 - Blacksburg, VA, United States Duration: Aug 1 2011 → Aug 5 2011

Publication series

Name	AIP Conference Proceedings
Volume	1416
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	15th International Conference on Narrow Gap Systems, NGS15
Country/Territory	United States
City	Blacksburg, VA
Period	08/1/11 → 08/5/11

Keywords

MBE
Magnetotransport
Raman
TEM
Topological Insulators
XRD

Access to Document

10.1063/1.3671709

Cite this

Liu, X., Smith, D. J., Fan, J., Zhang, Y. H., Cao, H., Chen, Y. P., Kirby, B. J., Sun, N., Ruggiero, S. T., Leiner, J., Pimpinella, R. E., Hagmann, J., Tivakornsasithorn, K., Dobrowolska, M., & Furdyna, J. K. (2011). Topological insulators Bi ₂Te ₃ and Bi ₂Se ₃ grown by MBE on (001) GaAs substrates. In 15th International Conference on Narrow Gap Systems, NGS15 (pp. 105-108). (AIP Conference Proceedings; Vol. 1416). https://doi.org/10.1063/1.3671709

@inproceedings{c5ed2bdeb7694461844e0a5ee977ffdb,

title = "Topological insulators Bi 2Te 3 and Bi 2Se 3 grown by MBE on (001) GaAs substrates",

abstract = "Bi 2Te 3 Bi 2Se 3 and their alloy films were successfully grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The structural properties of these films were investigated by Reflection high-energy electron diffraction (RHEED), Atomic force microscopy (AFM), X-ray diffraction (XRD), High-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform. High-field and low-temperature magneto-transport measurements on these films are carried out and discussed.",

keywords = "MBE, Magnetotransport, Raman, TEM, Topological Insulators, XRD",

author = "X. Liu and Smith, {D. J.} and J. Fan and Zhang, {Y. H.} and H. Cao and Chen, {Y. P.} and Kirby, {B. J.} and N. Sun and Ruggiero, {S. T.} and J. Leiner and Pimpinella, {R. E.} and J. Hagmann and K. Tivakornsasithorn and M. Dobrowolska and Furdyna, {J. K.}",

year = "2011",

doi = "10.1063/1.3671709",

language = "English",

isbn = "9780735409934",

series = "AIP Conference Proceedings",

pages = "105--108",

booktitle = "15th International Conference on Narrow Gap Systems, NGS15",

note = "15th International Conference on Narrow Gap Systems, NGS15 ; Conference date: 01-08-2011 Through 05-08-2011",

}

Liu, X, Smith, DJ, Fan, J, Zhang, YH, Cao, H, Chen, YP, Kirby, BJ, Sun, N, Ruggiero, ST, Leiner, J, Pimpinella, RE, Hagmann, J, Tivakornsasithorn, K, Dobrowolska, M & Furdyna, JK 2011, Topological insulators Bi ₂Te ₃ and Bi ₂Se ₃ grown by MBE on (001) GaAs substrates. in 15th International Conference on Narrow Gap Systems, NGS15. AIP Conference Proceedings, vol. 1416, pp. 105-108, 15th International Conference on Narrow Gap Systems, NGS15, Blacksburg, VA, United States, 08/1/11. https://doi.org/10.1063/1.3671709

TY - GEN

T1 - Topological insulators Bi 2Te 3 and Bi 2Se 3 grown by MBE on (001) GaAs substrates

AU - Liu, X.

AU - Smith, D. J.

AU - Fan, J.

AU - Zhang, Y. H.

AU - Cao, H.

AU - Chen, Y. P.

AU - Kirby, B. J.

AU - Sun, N.

AU - Ruggiero, S. T.

AU - Leiner, J.

AU - Pimpinella, R. E.

AU - Hagmann, J.

AU - Tivakornsasithorn, K.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

PY - 2011

Y1 - 2011

N2 - Bi 2Te 3 Bi 2Se 3 and their alloy films were successfully grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The structural properties of these films were investigated by Reflection high-energy electron diffraction (RHEED), Atomic force microscopy (AFM), X-ray diffraction (XRD), High-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform. High-field and low-temperature magneto-transport measurements on these films are carried out and discussed.

AB - Bi 2Te 3 Bi 2Se 3 and their alloy films were successfully grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The structural properties of these films were investigated by Reflection high-energy electron diffraction (RHEED), Atomic force microscopy (AFM), X-ray diffraction (XRD), High-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform. High-field and low-temperature magneto-transport measurements on these films are carried out and discussed.

KW - MBE

KW - Magnetotransport

KW - Raman

KW - TEM

KW - Topological Insulators

KW - XRD

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DO - 10.1063/1.3671709

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AN - SCOPUS:84862929033

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T3 - AIP Conference Proceedings

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EP - 108

BT - 15th International Conference on Narrow Gap Systems, NGS15

T2 - 15th International Conference on Narrow Gap Systems, NGS15

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