Top-Down Fabrication of Atomic Patterns in Twisted Bilayer Graphene

Ondrej Dyck; Sinchul Yeom; Andrew R. Lupini; Jacob L. Swett; Dale Hensley; Mina Yoon; Stephen Jesse

doi:10.1002/adma.202312065

Top-Down Fabrication of Atomic Patterns in Twisted Bilayer Graphene

Ondrej Dyck
, Sinchul Yeom
, Andrew R. Lupini
, Jacob L. Swett
, Dale Hensley
, Mina Yoon
, Stephen Jesse

Research output: Contribution to journal › Comment/debate

Abstract

Adv. Mater. 2023, 35, 2302906 DOI: 10.1002/adma.202302906 In the Experimental Section under “Sample Preparation” the first line reads: “Low-pressure chemical vapor deposition (LP-CVD) was used to grow graphene on Cu foil.^[28]” This is hereby corrected to: “Atmospheric-pressure chemical vapor deposition (AP-CVD) was used to grow graphene on Cu foil.^[28]” In addition, the reference that appears at the end of the sentence currently points to ref. [28]. This is incorrect. The correct new reference is as follows: I. Vlassiouk, P. Fulvio, H. Meyer, N. Lavrik, S. Dai, P. Datskos, S. Smirnov, Carbon 2013, 54 (Supplement C), 58.

Original language	English
Article number	2312065
Journal	Advanced Materials
Volume	36
Issue number	3
DOIs	https://doi.org/10.1002/adma.202312065
State	Published - Jan 18 2024

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10.1002/adma.202312065

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@article{89509674abef46c88680f9cad722cf75,

title = "Top-Down Fabrication of Atomic Patterns in Twisted Bilayer Graphene",

abstract = "Adv. Mater. 2023, 35, 2302906 DOI: 10.1002/adma.202302906 In the Experimental Section under “Sample Preparation” the first line reads: “Low-pressure chemical vapor deposition (LP-CVD) was used to grow graphene on Cu foil.[28]” This is hereby corrected to: “Atmospheric-pressure chemical vapor deposition (AP-CVD) was used to grow graphene on Cu foil.[28]” In addition, the reference that appears at the end of the sentence currently points to ref. [28]. This is incorrect. The correct new reference is as follows: I. Vlassiouk, P. Fulvio, H. Meyer, N. Lavrik, S. Dai, P. Datskos, S. Smirnov, Carbon 2013, 54 (Supplement C), 58.",

author = "Ondrej Dyck and Sinchul Yeom and Lupini, \{Andrew R.\} and Swett, \{Jacob L.\} and Dale Hensley and Mina Yoon and Stephen Jesse",

note = "Publisher Copyright: {\textcopyright} 2024 Wiley-VCH GmbH.",

year = "2024",

month = jan,

day = "18",

doi = "10.1002/adma.202312065",

language = "English",

volume = "36",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "wiley",

number = "3",

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TY - JOUR

T1 - Top-Down Fabrication of Atomic Patterns in Twisted Bilayer Graphene

AU - Dyck, Ondrej

AU - Yeom, Sinchul

AU - Lupini, Andrew R.

AU - Swett, Jacob L.

AU - Hensley, Dale

AU - Yoon, Mina

AU - Jesse, Stephen

PY - 2024/1/18

Y1 - 2024/1/18

N2 - Adv. Mater. 2023, 35, 2302906 DOI: 10.1002/adma.202302906 In the Experimental Section under “Sample Preparation” the first line reads: “Low-pressure chemical vapor deposition (LP-CVD) was used to grow graphene on Cu foil.[28]” This is hereby corrected to: “Atmospheric-pressure chemical vapor deposition (AP-CVD) was used to grow graphene on Cu foil.[28]” In addition, the reference that appears at the end of the sentence currently points to ref. [28]. This is incorrect. The correct new reference is as follows: I. Vlassiouk, P. Fulvio, H. Meyer, N. Lavrik, S. Dai, P. Datskos, S. Smirnov, Carbon 2013, 54 (Supplement C), 58.

AB - Adv. Mater. 2023, 35, 2302906 DOI: 10.1002/adma.202302906 In the Experimental Section under “Sample Preparation” the first line reads: “Low-pressure chemical vapor deposition (LP-CVD) was used to grow graphene on Cu foil.[28]” This is hereby corrected to: “Atmospheric-pressure chemical vapor deposition (AP-CVD) was used to grow graphene on Cu foil.[28]” In addition, the reference that appears at the end of the sentence currently points to ref. [28]. This is incorrect. The correct new reference is as follows: I. Vlassiouk, P. Fulvio, H. Meyer, N. Lavrik, S. Dai, P. Datskos, S. Smirnov, Carbon 2013, 54 (Supplement C), 58.

UR - https://www.scopus.com/pages/publications/85179658883

U2 - 10.1002/adma.202312065

DO - 10.1002/adma.202312065

M3 - Comment/debate

C2 - 38102090

AN - SCOPUS:85179658883

SN - 0935-9648

VL - 36

JO - Advanced Materials

JF - Advanced Materials

IS - 3

M1 - 2312065

ER -

Top-Down Fabrication of Atomic Patterns in Twisted Bilayer Graphene

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